2N5400_D27Z

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The 2N5400_D27Z is a NPN silicon transistor. It’s one of the most popular transistors used in today’s electronics. This transistor is used in a variety of applications, including amplifier stages, applications requiring high gain, switching, and high-frequency applications. In this article, we’ll discuss the application field, working principle, and features of the 2N5400_D27Z transistor.

Application Field

The 2N5400_D27Z transistor is commonly used for low-frequency amplifiers and for high-speed switching applications. It can also be used for low-noise amplifiers with high gain that operate between 10kHz and 10MHz, making it ideal for audio frequency adjustments and transistor radio applications. Other applications include audio, video and frequency changers, voltage stabilization and control circuits, lamps, computers, televisions, and microwave ovens.

Working Principle

At the heart of the 2N5400_D27Z transistor is an integrated circuit consisting of three elements: a base, a collector, and an emitter. The path between these three components constitutes the transistor\'s active region. Voltage is applied to the base, which controls the current flow between the collector and the emitter. When the current flowing between the collector and the emitter is high, the transistor is "on" and current can flow through the transistor. When the current flowing between the collector and the emitter is low, the transistor is "off" and current cannot flow through it.

An important feature of the transistor is its gain (a measure of the amplification of the current passing through it). To take advantage of this feature, the voltage applied to the base must be adjusted to maximize the transistor\'s gain. In general, the gain can be increased by increasing the voltage applied to the base, but this should be done cautiously, as too much voltage can cause the transistor to become saturated and can lead to device failure.

Features

The 2N5400_D27Z transistor has a maximum power dissipation of 600 mW, a collector-emitter voltage of 25V, a collector-base voltage of 30V, and an emitter-base voltage of 5V. It is also capable of delivering up to 3A of collector current and comes in a TO-66 package, making it suitable for through-hole mounting.

The transistor is rated for a maximum operating temperature of 150 degrees Celsius and is capable of withstanding operating temperatures up to 175 degrees Celsius. The transistor has a frequency response of up to 10MHz, making it suitable for use in RF applications. It also has a minimum gain of 60 and a maximum gain of 250, making it ideal for low-noise amplifiers and switching applications.

In summary, the 2N5400_D27Z is a NPN silicon transistor with a wide range of applications, including low-frequency amplifiers, high-speed switching, low-noise amplifiers, and RF applications. The transistor is rated for a maximum operating temperature of 175 degrees Celsius and is capable of withstanding high voltages and providing up to 3A collector current. The transistor’s high gain, wide frequency response, and small package make it an excellent choice for a variety of applications requiring a reliable and robust transistor.

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