2N5462G Allicdata Electronics
Allicdata Part #:

2N5462G-ND

Manufacturer Part#:

2N5462G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET P-CH 40V 0.35W TO92
More Detail: JFET P-Channel 40V 350mW Through Hole TO-92-3
DataSheet: 2N5462G datasheet2N5462G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 1.8V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Power - Max: 350mW
Operating Temperature: -65°C ~ 135°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: 2N5462
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N5462G is a Field-Effect Transistor (FET) widely used in many electronic and radio frequency applications. Specifically, it is a n-channel junction type FET, designed and manufactured by the JFET technology.

The transistors are typically used as amplifiers with a wide range of applications including audio amplifying, radio receivers, and microwave amplifying interfaces. Other applications include tuning circuits, bandpass filters, and frequency non-linear applications.

The 2N5462G has a maximum power rating of 500 mW for operation in a temperature range of -55°C-150°C. It has a very wide frequency range, covering 1 MHz to 15 GHz at 25°C, providing maximum associated gain of 18dB.

The 2N5462G parameter limits, according to the manufacturer, includes a Drain-Source Voltage of 30V and a maximum Drain Current of 15mA. The Gate-Source Voltage should not be more than 3V under any circumstances, and this determines its peak voltage which should not exceed 6 volts.

The 2N5462G is basically composed of a current source and a p-channel junction FET. It needs a small current of between 1μA and 10μA at the gate, allowing working at a Gate Voltage between -2V and 1V. It features high input, Output, and Transfer impedances, allowing up to 1000MHz modulation. It also features high Current Gain, making it suitable to many different kinds of applications.

Although the short-term Transient Recovery is not very good, the rise/fall and Short-Circuit Time is extremely short, making them suitable for high frequency applications. On the other hand, due to the low output current, high-power devices are not applicable in this case.

The fact that the 2N5462G is a n-channel junction type FET makes them suitable for a wide range of applications. They are extremely versatile and can be applied to any situation where a high frequency signal is required. Since they are manufactured using the JFET technology, they are extremely reliable, stable and easy to use.

Finally, in comparison with BJT and MOSFET, the 2N5462G has a better performance in terms of power dissipation and power gain, which makes them pretty reliable even in extreme conditions.

The specific data is subject to PDF, and the above content is for reference

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