2N5461_D74Z

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JFETs are a type of transistor that requires controlled electric fields to operate as a semiconductor. They are commonly used as switches, amplifiers and voltage regulators. The 2N5461_D74Z is a JFET device that can be used in applications such as audio mixing and is available in small and easy-to-install packages. This article will explain the application field and working principle of the 2N5461_D74Z.

The 2N5461_D74Z is a high-frequency N-channel JFET that operates with a breakdown voltage of 2.5V. It is an ideal device for use in applications where space savings are critical such as audio mixing, amplifiers, and voltage regulators. The device has a low rDS(ON) of 0.5 Ohms and a high input capacitance of 12 pF, making it capable of high switching speeds.

The 2N5461_D74Z has a high-frequency gain of 2000, meaning that it is capable of handling high frequencies. It also has an excellent noise performance, making it ideal for applications where low noise is essential. Additionally, the device has a high input impedance, which helps to reduce power consumption.

The working principle of the 2N5461_D74Z is based on the diffusion of electron motion. Electrons are diffused through the device due to their negative charge. This diffusion of electrons is controlled by the gate of the device. When a positive potential is applied to the gate, the electron mobility becomes inhibited, resulting in an increased electron flow through the device.

The 2N5461_D74Z is also highly reliable due to its low leakage current of only 0.15 mA. The device can be used in temperatures as low as -55°C and as high as 175°C. Additionally, it has a long life of up to 1000 hours.

In summary, the 2N5461_D74Z is an N-channel JFET that can be used in applications such as audio mixing, amplifiers, and voltage regulators. It has excellent noise performance, a high input impedance, and a high-frequency gain of 2000. The device is also highly reliable, with a long life and low leakage current. The 2N5461_D74Z operates based on the diffusion of electron motion, which is controlled by the gate of the device.

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