2N5429 Allicdata Electronics
Allicdata Part #:

2N5429-ND

Manufacturer Part#:

2N5429

Price: $ 19.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: NPN TRANSISTOR
More Detail: Bipolar (BJT) Transistor
DataSheet: 2N5429 datasheet2N5429 Datasheet/PDF
Quantity: 1000
100 +: $ 17.29760
Stock 1000Can Ship Immediately
$ 19.03
Specifications
Series: *
Part Status: Active
Description

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The 2N5429 transistors are one of the popular varieties of transistors for bipolar (BJT) single applications. They are used extensively for a variety of general purpose applications including amplifiers, switching and audio amplification.

The 2N5429 transistor is a three terminal, bipolar junction transistor (BJT) designed for a variety of amplifying tasks such as audio amplification, small RF amplifiers and switching. The 2N5429 is also widely used in general purpose switching, amplifier and small RF amplifiers circuits. It is a NPN type device and can be used in a variety of configurations such as common emitter, common collector and common base.

The 2N5429 has the ability to operate at higher current levels than other types of transistors, this leads to its suitability for use in high power amplifiers, switching systems and small high power RF amplifiers. The 2N5429 has relatively low cutoff current and high gain which makes it an ideal choice for audio amplifiers.

The 2N5429 also has an illuminated gain range which can range from 300 to 2,000 depending on the actual manufacturing process and the transistors bias conditions. Because of this range, the 2N5429 offers both, good gain and low noise levels, making it ideal for RF amplifiers and audio amplification.

The 2N5429 transistors are also durable and can withstand high temperatures and are suitable for use in both DC and AC circuits. Due to the durable construction, the 2N5429 transistors can handle high currents and can be used in high power applications. They also have a wide safe operating temperatures, which makes them suitable for use in varying temperature conditions.

The 2N5429 transistors working principle is based on the PN junction formation. This is when the two N-type and P-type semiconductors meet and the conductance is adjusted according to the bias conditions. The main property of the PN junction is that it transfers current in two directions, depending on the direction of the bias and the resulting electric field.

The 2N5429 transistors can also be used as a form of control, in which the current flowing is controlled through the injection of carriers by the base region which affects the base current. This is particularly suitable for small-signal amplifiers, where the small current passing through the transistor affects the gain. The 2N5429 transistors offer low resistance and voltage gains, making them suitable for small signals amplifier and control applications.

In summary, the 2N5429 transistors are a versatile type of transistors, ideal for general purpose amplification, switching and audio amplification. They are suitable for use in both, DC and AC circuits, have a wide range of illuminated gain levels and can withstand high temperatures. The 2N5429 has a working principle based on the PN junction formation and can be used as a form of control for small signals amplifiers.

The specific data is subject to PDF, and the above content is for reference

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