2N5401_J61Z

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	150V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 10mA, 5V
Power - Max:	625mW
Frequency - Transition:	400MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	2N5401

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Introduction to 2N5401_J61Z Transistors

The 2N5401_J61Z is a bipolar junction transistor (also known as BJT or BJT single) and is a type of transistor used in many applications. It is primarily used in power supplies, as well as audio amplifiers and general purpose switching circuits.

Application Field of 2N5401_J61Z Transistors

2N5401_J61Z transistors are used in a wide variety of applications where high current gains are needed. They are frequently used in power supplies, AC and DC motors, relay circuits, switching circuits, DC-DC converters and other low-noise switching applications. Additionally, these transistors can handle large amounts of current and dissipate more heat than other similar types of transistors. They are extremely popular in audio amplifier and voltage regulator circuits.

Working Principle Of 2N5401_J61Z Transistors

Bipolar junction transistors (BJTs) are three terminal electronic devices made up of two doped semiconductor junctions forming a layer. These devices are used for amplification and switching applications. In a BJT, the emitter-base junction will be forward biased and the collector-base junction will be reverse biased. This causes a small current to flow into the base and out of the emitter, allowing a larger current to flow into the base, out of the collector and into the emitter. This current amplification is known as the gain of the transistor. The 2N5401_J61Z transistor is a high gain, low leakage, low power PNP transistor with a base-emitter voltage of -30V and a collector-emitter voltage of -225V. The transistor can tolerate a maximum collector current of -1A and a collector-emitter junction temperature of 150°C. The temperature stability of the 2N5401_J61Z transistor is excellent, allowing it to be used in high temperature applications.

Conclusion

The 2N5401_J61Z is a popular transistor in a wide range of applications due to its high current gains and temperature stability. It is a PNP transistor with a high base-emitter voltage and a collector-emitter voltage of -225V, allowing it to be used in automotive, industrial and consumer applications. This general purpose switching and amplifier type transistor works by utilizing a forward biased emitter-base junction and a reverse biased collector-base junction to produce current amplification.

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