2N5461RLRA Allicdata Electronics
Allicdata Part #:

2N5461RLRA-ND

Manufacturer Part#:

2N5461RLRA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET P-CH 40V 0.35W TO92
More Detail: JFET P-Channel 40V 350mW Through Hole TO-92-3
DataSheet: 2N5461RLRA datasheet2N5461RLRA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Power - Max: 350mW
Operating Temperature: -65°C ~ 135°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N5461
Description

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The 2N5461RLRA is a transistor, and it is classified along with other transistors as a junction field effect transistor (JFET) or “JFET.” JFETS are typically used in applications that involve either switching applications or those that require low noise or low power consumption. The 2N5461RLRA is unique among other transistors because its operation is based on the principles of metal-oxide semiconductor field effect transistors (MOSFETs).

The 2N5461RLRA is a three-terminal device, meaning it has three connections. These connections are the source, the gate, and the drain. The source and drain connections are responsible for carrying the current flow to and from the device, while the gate connection acts as its control mechanism. By applying a small negative (polarity) voltage to the gate, a depletion region is created which inhibits the current flow from the source to the drain. This lack of current is what makes the 2N5461RLRA such an efficient and low-noise device.

The 2N5461RLRA is often used as a voltage-controlled switch. In this application, a negative voltage is applied to the gate of the device, and the resulting depletion region inhibits current flow to the drain. When a voltage of sufficient magnitude is then applied to the source, current is permitted to flow to the drain. This is what makes the 2N5461RLRA such a versatile device, as it can be used in a variety of applications.

In addition to being used as a voltage-controlled switch, the 2N5461RLRA can also be used in a variety of low-noise applications. The device is able to operate at very low voltages, resulting in low amounts of noise, without having to sacrifice its power efficiency. This makes it an ideal choice for applications that require both low noise levels and high power efficiency.

In summary, the 2N5461RLRA is a three-terminal device, whose operation is based on the principles of metal-oxide semiconductor field effect transistors (MOSFETs). It can be used for both switching and low-noise applications, and it also benefits from being an extremely power-efficient device. This makes it an ideal choice for a variety of applications, and its versatile construction makes it suitable for a range of environments.

The specific data is subject to PDF, and the above content is for reference

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