2N5484

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The 2N5484 Small-Signal High-Frequency Field-Effect Transistor (FET) is a high-frequency FET, widely used in high-frequency applications. It has a medium-gain and medium-to-low forward transconductance, and is ideal for use in applications that require low-noise, high-stable and low-distortion characteristics.

The 2N5484 belongs to a general class of FETs known as metal-oxide-semiconductor field-effect transistors (MOSFETs). In general, these are electronic devices that use a thin, gate oxide layer between two electrodes (source and drain) to produce varying electrical current as a function of gate voltage. In the 2N5484 FET, this gate oxide layer uses a lower threshold voltage, meaning that they are well-suited for use in high-frequency applications.

The 2N5484 is a common choice for use in radio-frequency applications, as it has a very low noise figure (0.3dB) and a very high amplification gain (7-15dB). This makes it ideal for use in RF amplifiers and attenuators, as well as in oscillators and frequency changers. Along with its high frequency performance, the FET also possesses very good quiescent drain current stability.

The main principle of operation of the 2N5484 is that of a voltage-controlled device. In simplistic terms, this means that changes in the gate voltage of the FET result in corresponding changes in the current flow through the drain and source. The gate voltage creates an electrical field across the gate dielectric, which modifies the width of a conducting channel between the source and drain. This conducivity channel is dependent on the gate voltage and is therefore the controlling factor within FETs.

Along with its basic operating principle, the 2N5484 also offers a wide frequency range, low voltage drop and good stability. This makes the 2N5484 an ideal choice for RF and microwave applications. Examples of these applications include signal switching, signal modulation, and power amplifiers. These applications take advantage of the device\'s ability to amplify low-level and high-frequency signals.

Overall, the 2N5484 is one of the most widely used high-frequency FETs, particularly within the realm of RF and microwave applications. Its main characteristics include noise performance, stability and relatively high frequency response, making it a popular choice amongst engineers. Combined with its low voltage drop and good gain stability, the 2N5484 is an excellent choice for diverse and demanding applications.

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