2N5461G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N5461G is a junction gate field-effect transistor (JFET) that is used in amplification and switching applications. This type of transistor offers excellent low-noise performance in comparison to other types of transistors. The 2N5461G features a low ON resistance and can handle a minimum drain current of 50mA. The 2N5461G is also known for having very low power consumption and is able to operate at high temperatures.

The 2N5461G is a type of JFET that operates as a depletion-type field-effect transistor. It is different from other transistors in that it has no base, but instead, its gate acts as both a source and a drain. The 2N5461G is a P-channel device, meaning that its conducting channel is composed of electrons. This type of transistor is most commonly used for amplification and switching applications because of its low noise performance and low current consumption.

In applications such as pre-amplifiers and switching circuits, the 2N5461G is an ideal choice because of its low ON resistance and high drain current. The transistor operates best at low-to-moderate drain voltages, making it well suited for low-noise applications. Additionally, the 2N5461G also has very low power consumption, allowing it to be used in battery-powered applications.

The 2N5461G has a common source configuration, which simplifies the building of low-noise circuits. The source terminal of the transistor is connected to the negative supply, while the drain terminal is connected to the load or the output. This configuration allows the JFET to amplify signals while providing minimal noise. The bias current flowing through the transistor is proportional to the gate voltage, which allows it to be controlled by an applied gate voltage.

The 2N5461G is a versatile and reliable JFET that can be used in a variety of applications. It is commonly used in audio processing and amplification, switching circuits, and high-impedance sensing applications. Its low-noise performance and low-power consumption make it well suited for low-power applications such as battery-powered devices. Additionally, the 2N5461G can also be used in high-temperature applications.

The specific data is subject to PDF, and the above content is for reference