2N5638_D26Z Allicdata Electronics
Allicdata Part #:

2N5638_D26Z-ND

Manufacturer Part#:

2N5638_D26Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 30V 0.35W TO92
More Detail: JFET N-Channel 30V 350mW Through Hole TO-92-3
DataSheet: 2N5638_D26Z datasheet2N5638_D26Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
Resistance - RDS(On): 30 Ohms
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N5638
Description

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Transistors are electronic components that are used to control current flow in circuits. In particular, junction field-effect transistors (JFETs) are three-terminal devices in which the current flow is controlled by a voltage applied to a gate at the junction of two semiconductor materials. The 2N5638_D26Z is a particular JFET that is used in a variety of applications.

The 2N5638_D26Z is a depletion-mode JFET, meaning that the voltage can be used to reduce or stop current flow rather than increase it. It is designed for unipolar power switching, energy harvesting, and similar applications. This device has very low capacitance and low input impedance, which makes it well-suited to perform switching duties in energy-efficient control circuits and energy-harvesting circuits.

The standard 2N5638_D26Z package is a dual MOSFET in a flat plastic 8-pin DIP. It is designed for surface mounting and features two independent MOSFET sections in one package. Each section consists of a source, drain, and gate, as well as a guard ring, which reduces voltage spikes within the device. The device also includes an ESD protection circuit to guard against electrostatic discharge.

The 2N5638_D26Z is a relatively straightforward device in terms of operation. The voltage applied to the gate affects the current flow through the device’s source-drain path. As voltages increase, the current flow increases, while as the voltage drops, the current drops. This allows one to precisely control the current flow through the device.

The 2N5638_D26Z is an excellent choice for a variety of applications, from switching logic to energy harvesting. It features low on-state voltage drop and high off-state resistance, making it an efficient device for power switching applications. The low capacitance and low input impedance also make the device ideal for switching logic due to its ability to rapidly respond to changes in voltage. Furthermore, the device’s ESD protection circuit helps protect it from damage in the event of a static discharge.

The 2N5638_D26Z is a reliable, efficient device that is well-suited for a variety of applications. Its low on-state voltage drop and high off-state resistance make it an excellent choice for power switching applications, while its low capacitance makes it well-suited for switching logic. Furthermore, its ESD protection helps ensure that it is protected from damage in the event of an electrostatic discharge. Therefore, the 2N5638_D26Z is an excellent choice for energy harvesting, power switching, and other related applications.

The specific data is subject to PDF, and the above content is for reference

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