2N5639G Allicdata Electronics
Allicdata Part #:

2N5639G-ND

Manufacturer Part#:

2N5639G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 35V 0.31W TO92
More Detail: JFET N-Channel 35V 310mW Through Hole TO-92-3
DataSheet: 2N5639G datasheet2N5639G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
Resistance - RDS(On): 60 Ohms
Power - Max: 310mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: 2N5639
Description

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The 2N5639 and its related products are a class of junction field-effect transistors (JFETs) that has wide application in signal condition, signal routing, and amplification. It is typically used for the amplification of signals provided by small sensors, such as those found in cameras or electronic instruments. The device produces low distortion and high gain, which is suitable for high frequency signal manipulation in a wide variety of applications.

Junction field-effect transistors are a special class of electronic components designed for amplifying and controlling signals. They are used to amplify or reduce signals in circuits, such as receivers and transmitters. They are also used to control signals such as voices and audio, as well as digital signals. The 2N5639G is a JFET with several unique features, such as its low distortion, high gain and a good noise immunity.

The working principle of the 2N5639G is based on the effect of a voltage applied to the gate terminal. A positive voltage applied to the gate terminal will create an inverted electric field at the junction between the source and drain of the device. This electric field causes a current to be attracted to the junction. This current then creates a voltage at the source, which is amplified by the device. When a negative voltage is applied to the gate terminal, the electric field is reversed and the current is repelled from the junction.

The device is primarily used for amplification in applications where low distortion is required, such as receivers and transmitters. It is also used for the manipulation of high frequency signals in electronic instruments and cameras. The device is ideal for operation in high or low noise environments, as it provides good noise immunity. It also has low power consumption, making it a suitable choice for portable equipment.

The 2N5639G is a reliable and versatile device, with many applications in signal condition, signal routing, and amplification. Its low distortion and high gain make it a suitable choice for many types of instrumentation, and its low power consumption makes it suitable for portable equipment. Its good noise immunity also makes it a great choice for high or low noise environments. Its broad range of applications make it a great choice for a variety of needs.

The specific data is subject to PDF, and the above content is for reference

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