| Allicdata Part #: | 2N5655OS-ND |
| Manufacturer Part#: |
2N5655 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 250V 0.5A TO225AA |
| More Detail: | Bipolar (BJT) Transistor NPN 250V 500mA 10MHz 20W ... |
| DataSheet: |  2N5655 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 500mA |
| Voltage - Collector Emitter Breakdown (Max): | 250V |
| Vce Saturation (Max) @ Ib, Ic: | 10V @ 100mA, 500mA |
| Current - Collector Cutoff (Max): | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 100mA, 10mV |
| Power - Max: | 20W |
| Frequency - Transition: | 10MHz |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-225AA, TO-126-3 |
| Supplier Device Package: | TO-225AA |
| Base Part Number: | 2N5655 |
Description
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2N5655 is a surface mount NPN & PNP General Purpose Amplifier made by ON Semiconductor. It is a single bipolar junction transistor and is specifically designed for applications requiring high-current gain at medium-high power. The 2N5655 is a low-power transistor that can be used in a wide variety of line feeding, medium-power switching, and driver applications.The 2N5655 transistor consists of three layers of semiconductor material which are arranged in the form of an N-type and a P-type, creating three independent junctions. When the base voltage is applied, it creates an electric field across the emitter-base region and controls the current flow. The current is internally amplified and is available between the collector and emitter. This current amplification is called "BJT gain".The 2N5655 provides high gain and low power dissipation at medium-high power and provides a large signal current gain from its base to its collector. It also has a wide power supply range, allowing operation from both low- and high-voltage power sources. The 2N5655 is also designed for use in environments with power transients and has a low input capacitance and a high output current capability. The 2N5655 can be used in various applications such as audio amplifiers, LED drivers, converters and power supplies, voltage regulators, voltage thresholds, and DC protection circuits. It is also suitable for high-frequency applications like HF, VHF, and UHF frequency generation.The 2N5655 is also suitable for use in portable devices, such as mobile devices, as it has low power consumption, a wide power supply range, and a small physical size for ease of assembly. Due to its small physical package size, it can also be used in a variety of small-scale electronic devices.2N5655 transistors can be used in both switching and linear applications. For switching applications, the transistor can be used to switch on/off a device with a high current draw due to its large current gain. The transistor can also be used to control on/off times, pulse widths, or current flows in linear applications. It can also be used to amplify an input signal in order to create a larger output.The 2N5655 offers superior performance over the 2N4048, with a higher gain bandwidth, increased output current, lower power dissipation and a smaller package. This makes the 2N5655 a suitable choice for high-current gain applications requiring small physical size.In summary, 2N5655 is a surface mount NPN & PNP General Purpose Amplifier made by ON Semiconductor. It is a single bipolar junction transistor and is specifically designed for applications requiring high-current gain at medium-high power. It offers superior performance over the 2N4048, with a higher gain bandwidth, increased output current, lower power dissipation and a smaller package. The 2N5655 can be used in a variety of applications such as audio amplifiers, LED drivers, converters, power supplies, voltage regulators, and more.
The specific data is subject to PDF, and the above content is for reference
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