Allicdata Part #: | 2N5639OS-ND |
Manufacturer Part#: |
2N5639 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 35V 0.31W TO92 |
More Detail: | JFET N-Channel 35V 310mW Through Hole TO-92-3 |
DataSheet: | 2N5639 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 35V |
Drain to Source Voltage (Vdss): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 25mA @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 10pF @ 12V (VGS) |
Resistance - RDS(On): | 60 Ohms |
Power - Max: | 310mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5639 |
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JFETs (Junction Field-Effect Transistors) are a type of transistor specifically designed to operate without the need for an external voltage. This makes them ideal for use in many applications, including signal processing, amplifier design, and switch control. The 2N5639 presents an important example of the variety of uses for JFETs and introduces important aspects of the technology.
The 2N5639 is an N-channel JFET, capable of operating in both depletion and enhancement mode. This allows it to be employed in many applications, with different configurations and at varying levels of voltage. Its most common use is as an amplifier, where it is positioned between an input and output signal and is allowed to amplify one while ignoring the other. It can also be used as a switch, with the signal being placed directly on the gate and being able to be toggled between input and output with a discrete voltage applied.
The driving force behind the 2N5639’s performance is the basic physics of how it operates. JFETs utilise what is known as the ‘junction field effect’, which describes a type of electric field created at the contact between two materials. In the case of the 2N5639, this field is used to separate the gate voltage (input signal) from the drain voltage (output signal). The effect of this separation is to increase the resistance between the two ends, so that when a signal is applied, it is only passed through the gate and not through the drain. This is known as the ‘depletion’ mode, where the input signal is allowed to pass through and be amplified, whilst the output signal is blocked. The 2N5639 can also be operated in ‘enhancement’ mode, where the electric field is reversed, allowing both input and output signals to pass.
The 2N5639’s excellent performance and wide usage across applications is further enhanced by its ability to operate in temperatures up to 225°C. This makes it extremely suitable for use in extreme environments, where large amounts of parasitic capacitance can occur, such as in power amplifiers or when driving large motors. This also makes it suitable for use in combination with other similar devices, such as op-amps, to ensure an extremely precise and stable operation.
In summary, the 2N5639 is an extremely versatile JFET which is capable of operating in both depletion and enhancement modes. It is most commonly used as an amplifier, but it can also be used as a switch, making it a suitable component for a wide range of applications. Furthermore, it is highly temperature resistant, enabling it to meet the requirements of many industrial applications.
The specific data is subject to PDF, and the above content is for reference
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