2N5660

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2N5660 is a single-stage bipolar junction transistor (BJT) manufactured by Philips Semiconductor and used in a variety of applications. The transistor is an NPN device with a collector-base breakdown voltage (BVcb) of 120V and a maximum collector-base voltage (Vcb) of 130V.

The 2N5660 is commonly used as a switch and amplifier, and is often used in signal conditioners, power supply circuits, and voltage regulators. The transistor can also be used in line-regulation circuits, such as those found in power amplifiers, audio amplifiers and audio/video receivers. The transistor is also widely used as an oscillator, buffer and driver in a wide variety of applications, such as television and radio receivers, CRT drivers, and motor controls.

The working principle of the 2N5660 is quite simple and straightforward.The transistor works by allowing current to flow from the base to the collector and from there to the emitter when a small current flow through the base-emitter junction. This small current is referred to as the biasing current and it is this current that controls the amount of current that can flow through the collector-emitter junction.

When the emitter voltage increases, the gain of the transistor increases as well, since the current flowing through the collector-emitter junction is proportional to the voltage difference between the two junctions. Conversely, when the collector voltage increases, the gain of the transistor decreases. The gain of the transistor can also be affected by the presence of other devices, such as resistors and capacitors, which can be used to modify the gain of the transistor.

In summary, the 2N5660 is a versatile transistor with a wide variety of applications. It is commonly used as a switch and amplifier, and is widely used as an oscillator, buffer and driver. The working principle of the transistor is quite simple and straightforward, as it is based on the biasing current that is sent through the base-emitter junction to control the amount of current that flows through the collector-emitter junction. The gain of the transistor can also be manipulated by the addition of other devices, such as resistors and capacitors.

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