Allicdata Part #: | 2N5681-ND |
Manufacturer Part#: |
2N5681 |
Price: | $ 14.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | PNP TRANSISTOR |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | 2N5681 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 12.88700 |
Series: | * |
Part Status: | Active |
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2N5681 Application Field and Working Principle
The 2N5681 is a Silicon, NPN Silicon Epitaxial Planar Transistor intended for general purpose application. This transistor falls in the category of Bipolar Transistors - Single and is specifically designed for high voltage and high current applications, such as high power switches, audio amplifiers, and motor drives. It is also suitable for various low-level switching applications.
Features
- High voltage operation
- High current operation
- High power handling capability
- Low on-state resistance
- Low saturation voltage
- Smooth switching characteristics
- High frequency operation
- Low noise levels
- High radiation immunity
- Suitable for high temperature operation
Applications
- High power switches
- Audio amplifiers
- Motor drivers
- DC-DC converters
- High voltage processors
- Low level switching applications
Working Principle
The 2N5681 is a bipolar transistor and operates in two active regions—the cutoff and the saturation region. In the cutoff region, the transistor is turned off, and no current is flowing through the collector and emitter. When the base is forward biased, the current begins to flow from the base to the emitter. This forward biased current is known as the input current. The input current increases exponentially resulting in base current amplification in the collector-emitter region. This results in a fixed current in the collector-emitter circuit and this is known as the output current. Thus, current amplification is achieved in the device.
The 2N5681 can also be used as a switch because it has a low on-state resistance. When the base voltage is increased, current begins to flow through the collector and emitter region. This increases the voltage drop across the collector and emitter. As a result, the transistor acts like a switch and is turned on. This is referred to as the saturation region. Since the transistor has a low on-state resistance, it has a high voltage handling capability.
The 2N5681 is well suited for applications that require high voltage and high current, such as high power switches, audio amplifiers and motor drives. It also has good frequency performance which makes it suitable for various low-level switching applications. Furthermore, it has a low saturation voltage, low noise and high radiation immunity, making it suitable for high temperature operation.
The specific data is subject to PDF, and the above content is for reference
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