2N5685

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2N5685 is a type of bipolar junction transistor (BJT), it can be used in different electronic applications, for example for audio amplifiers, power supply, drivers and other circuits. It is commonly used in low- and medium-frequency circuits as well as in RF applications such as radio amplification and switching. 2N5685 has a maximum collector-base voltage of 60V, a guaranteed minimum voltage gain of 50 and a maximum power dissipation of 500mW at a junction temperature of 250˚C.

The working principle of a bipolar junction transistor is based on two p-n junctions, which when connected in a certain fashion, allow the current to be controlled by external voltage. The BJT\'s two internal junctions (base-collector and base-emitter) determine the electrical properties of the transistor. The base-emitter junction conducts current when it is given a forward bias voltage and the current between the base and collector increases exponentially with the base current. The switch action is obtained by varying the current through the base-emitter junction. When the base current increases, the collector current also increases, thus switching the transistor from the off-state to the on-state. When the base current is reduced, the collector current reduces, thus turning the transistor off.

The 2N5685 has three leads, collectors, base and emitter. The collector current is controlled by the amount of current flowing through the base lead and is directly proportional to the amount of current flowing through the collector. It is possible to calculate the base current required to produce a given level of collector current by using the two-point model to represent the base-emitter diode. The base current can be calculated from the following equation: I_B = [V_CE - (V_EC/h_FE)]/R_B, in which V_CE and V_EC are the respective voltage drop across the emitter-collector diode and emitter-base diode. h_FE is the transistor\'s DC current gain, which typically ranges from 40 to 100 for the 2N5685, and R_B is the resistance of the base lead.

In a common-emitter configuration, the 2N5685 can be used as an amplifier, with the base-collector connection providing the input signal and the base-emitter connection providing the output signal. In this configuration, the DC current gain of the transistor is usually higher than specified and can range from 50 to 200. The common-emitter configuration is also suitable for use as a switch, where the base-collector connection provides the control voltage and the base-emitter connection is connected to the load. The load voltage is switched on when the control voltage reaches a certain threshold.

In a common-base configuration, the 2N5685 can be used as an amplifier with the base-emitter connection providing the input signal and the base-collector connection providing the output signal. This configuration is typically used in ultra-high frequency (UHF) amplifiers due to its high gain and low input capacitance. The common-base configuration also offers superior linearity when compared to the other BJT configurations. The common-base configuration is also suitable for use as a linear switch, where the base-emitter connection provides the control voltage to the load and the base-collector connection provides the output.

In summary, the 2N5685 is a type of bipolar junction transistor (BJT), with a maximum collector emitter voltage of 60V, a minimum voltage gain of 50 and a maximum power dissipation of 500mW, which can be used in low- and medium-frequency circuits, RF applications and as a switch or amplifier. Its three leads (collectors, base and emitter) allow the current to be controlled by external voltage and the current gain of the transistor can range from 40-200. It is also suitable for use in linear switching, where it provides superior linearity compared to other BJT configurations.

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