2N5638RLRA Allicdata Electronics
Allicdata Part #:

2N5638RLRA-ND

Manufacturer Part#:

2N5638RLRA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 35V 0.31W TO92
More Detail: JFET N-Channel 35V 310mW Through Hole TO-92-3
DataSheet: 2N5638RLRA datasheet2N5638RLRA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
Resistance - RDS(On): 30 Ohms
Power - Max: 310mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N5638
Description

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2N5638RLRA JFETs are commonly used among many electronic applications. These special purpose transistors are incredibly well-suited for circuit designs due to their reliable performance and user-friendly nature. This article outlines the application field of 2N5638RLRA JFETs, as well as their working principle.

2N5638RLRA JFETs are robust transistors used in a number of electronic circuits. These transistors are primarily used for amplification and switching applications. They offer high speed and low noise, making them ideally suited to audio and communication systems. Furthermore, the transistors can be used in a wide range of temperature environments, making them highly reliable in challenging circumstances.

The 2N5638RLRA JFETs have excellent current and voltage handling abilities. The maximum current handling capacity is 2.25A, while the maximum frequency is 90MHz. Furthermore, the maximum peak input power capability is 25W. This makes them highly suitable for many challenging and power-hungry applications.

Furthermore, the 2N5638RLRA JFETs have a low-temperature coefficient. This makes them well-suited for circuits that need to maintain a linear, voltage-controlled current. This temperature coefficient can help minimize power dissipation in a circuit, which is critical for many power-sensitive applications.

The 2N5638RLRA JFETs are also relatively easy to handle in terms of their pinning system. The device has two pins, with the gate and source pins positioned on one side of the structure. This makes them particularly useful for compact circuit designs as only two pins need to be connected.

The working principle of the 2N5638RLRA JFETs is relatively simple. A voltage applied to the gate of the device can cause an increase or decrease in the current flowing through the channel. This change in current is dependent on the direction of the applied voltage, making the device highly versatile and user-friendly.

The current-voltage relationship of the 2N5638RLRA JFETs is also well-suited for use as a switch. Whereas a bipolar transistor requires current to drive the base of the device, the 2N5638RLRA JFETs only require voltage. This makes them ideal for circuits where power draw is a critical criterion.

To conclude, the 2N5638RLRA JFETs are incredibly well-suited for electronic circuits due to their reliable performance and user-friendly nature. These transistors offer high speeds, low noise, and excellent temperature coefficients. Furthermore, the device has only two pins and requires little power. This makes them ideal for compact and power-sensitive designs. The simple current-voltage relationship of the device also makes it excellent for use as a switch. These unique characteristics make 2N5638RLRA JFETs an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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