Allicdata Part #: | 2N5686MS-ND |
Manufacturer Part#: |
2N5686 |
Price: | $ 46.59 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | NPN TRANSISTOR |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | 2N5686 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 42.35980 |
Series: | * |
Part Status: | Active |
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The 2N5686 is a bipolar junction transistor (BJT) used in a wide range of applications. This transistor is a three-terminal device and acts as a current stabilizing element that allows large currents to be controlled without affecting the load impedance. It is available in several varieties for different current ratings, with a common shape, strength and structure. It is also known by its TO-39 style package.
The 2N5686 is a NPN transistor of small signal type having a low power rating. It is mainly used in low voltage, high frequency amplifier applications. This device is suitable for use in amplification and switching applications. It is suitable for operation at a temperature range of -55°C to +150°C.
The 2N5686 is designed to provide low distortion and good linearity over a wide range of input signal levels. It can be used in radio-frequency switch circuits, input circuits in signal processors, mixers, frequency multipliers, and intermediate frequency signal amplifiers. This device is also suitable for use in electronic amplifiers and high frequency oscillators in television and high-frequency precision tuning circuits.
The 2N5686 has a maximum collector current rating of 10mA, with a maximum base current of 0.1mA. The on-state resistance is relatively low. The maximum voltage rating of the collector emitter junction is 30V.
The 2N5686 has a typical current gain of 260 with a Collector-Emitter Saturation Voltage drop of 200mV. Its low noise figure and high input impedance make it suitable for a wide range of signal processing applications. The device has a typical unrestored collector-base capacitance of 20pF and a typical output capacitance of 10pF.
In its simplest form, the 2N5686 bipolar junction transistor has three connections. The emitter, base and collector which may be used as an amplifier or switch. When the base is forward biased, electrons will flow from the emitter to the collector and the transistor is ‘ON’. Transistor current gain is determined by the ratio of collector current to the base current, which can be adjustable with the use of a base resistor.
When the base is reverse biased, the transistor is ‘OFF’ and no current flows from the collector to the emitter. Depending on the application, the gain of the transistor may be chosen to be either large or small. The 2N5686 can be configured in different ways such as common emitter, common base, or emitter-follower.
The 2N5686 bipolar junction transistor is ideally suited to low voltage, high frequency amplifier applications. Its low power and small size make it an ideal choice for cost-sensitive applications such as consumer electronics, and medical and automotive devices. With its high current gain, low noise figure and superior switching speed, the 2N5686 can be the ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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