Allicdata Part #: | 2N5671-ND |
Manufacturer Part#: |
2N5671 |
Price: | $ 34.71 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | NPN TRANSISTOR |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | 2N5671 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 31.55670 |
Series: | * |
Part Status: | Active |
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The 2N5671 is a single transistor bipolar junction transistor (BJT) device with high current capabilities for its relatively small size, making it a reliable and cost-effective choice for many applications. Here, we will discuss the application field of the 2N5671, as well as its associated working mechanism.
Application Field of the 2N5671
The 2N5671 is primarily used in the amplification, switching and voltage regulator circuits. It finds application in a variety of industrial processes, including those in the automotive, medical and aerospace industries. It is used in a range of digital and analogue circuits, including power amplifiers, speaker amplifiers and audio amplifiers. It is also used in switching applications that require high current and switching speeds, such as relays and switches.
The 5671 is also used in many circuit designs as a current source, as it is capable of supplying a steady 10mA of current. This makes it suitable for use in a range of low-power and low-current applications, such as LED lighting, sensors, and voltage regulators.
Working Principle of the 2N5671
The 2N5671 is a bipolar junction transistor (BJT). As its name implies, the device consists of two p-type and one n-type semiconductor material, forming two pn junctions—the base and collector junctions. By applying an electrical signal to the base of the device, minority carriers are injected into the base region, allowing current to flow between the emitter and collector of the device.
In operation, the current gain of the device is determined by the ratio of the emitter current to the base current. This is known as the DC current gain, or hFE. When an electrical signal is applied to the base, a small portion of the total current flows through it and is then amplified by the current gain of the device, causing the collector current to increase thus providing amplification.
The 2N5671 is available in different package configurations. When used in power applications, the device is recommended to be mounted to a heat sink for effective thermal management, as the device has a maximum junction temperature rating of 175°C.
The 2N5671 is a highly versatile device, with a range of applications across various industries and applications. Its small size and high current capabilities make it a reliable and cost-effective solution for many circuits. With the correct package configuration and thermal management, the device can provide reliable performance in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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