2N5679 Allicdata Electronics
Allicdata Part #:

2N5679-ND

Manufacturer Part#:

2N5679

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: PNP 100V 1A 10W /2N5681 COMPLMT
More Detail: Bipolar (BJT) Transistor PNP 100V 1A 1W Through H...
DataSheet: 2N5679 datasheet2N5679 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39
Base Part Number: 2N5679
Description

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Transistors - Bipolar (BJT) - Single

Bipolar junction transistors (BJTs) are two-terminal, solid state semiconductor devices that use two p-n junctions to amplify signals. The 2N5679 is an example of a single-generic BJT, which is designed specifically for handling large signal current. The 2N5679 components are designed to provide better voltage and temperature ratings than generic BJT models.

Applications

The 2N5679 transistor is used in a variety of applications. It is used in audio amplifiers, snubbers, gate drive stage, linear switching devices, low level RF amplifiers, and low frequency amplifiers. It is also used in voltage regulators and power drivers for switching applications in industrial automation and control. Additionally, the 2N5679 transistor is used for high power, low noise, and high efficiency applications.

Working Principle

The 2N5679 bipolar junction transistor is a three-terminal device made up of a base, an emitter, and a collector. It works on the principle of junction diode, where the current is controlled by an electric field. The electric field is generated by the forward bias of the base-emitter junction and the reverse bias of the base-collector junction. This electric field affects the flow of current through the device.

The emitter-base junction acts as a current source, while the base-collector junction acts as a current limiter. The base-emitter junction also produces very low voltage drop and acts as a voltage amplifier. The current flowing from the emitter to the collector is controlled by the current flow from the base which creates an amplified output current.

The 2N5679 has a high power rating, enabling it to be used in higher current applications. It also has a current gain that ranges from 400 to 900, making it ideal for applications requiring high gain. The 2N5679 also has a low saturation voltage, which makes it suitable for switching applications.

Conclusion

The 2N5679 transistor is a single-gen BJT designed to handle large signal current. It is used in applications such as audio amplifiers, voltage regulators, and power drivers. It works on the principle of junction diode and uses a base-emitter junction to produce a low voltage drop and act as an amplifier. Additionally, it has a high power rating and high current gain, making it suitable for high power, low noise, and high efficiency applications.

The specific data is subject to PDF, and the above content is for reference

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