2SA10220BL Allicdata Electronics
Allicdata Part #:

2SA10220BLTR-ND

Manufacturer Part#:

2SA10220BL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PNP 20V 0.03A MINI-3P
More Detail: Bipolar (BJT) Transistor PNP 20V 30mA 300MHz 200mW...
DataSheet: 2SA10220BL datasheet2SA10220BL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V
Power - Max: 200mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1
Base Part Number: 2SA10220
Description

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The 2SA10220BL transistor is a bipolar junction transistor (BJT) that falls into the category of single transistors. It is a PNP transistor with a rated maximum collector current of 0.5A, a rated power dissipation of 1.5W and a maximum collector-emitter voltage of 30V.

This transistor has a wide range of applications including audio amplifiers, general-purpose amplifier circuits and switch circuits.

The 2SA10220BL operates on the principle of collector current controlled by base current, whereby the number of electrons available to the base is the determining factor for the current flow between the collector and emitter. When a small amount of current is applied to the base, the current gain of the transistor is determined by the ratio between the base-emitter voltage and the base current. This results in a much larger current flowing between the collector and emitter as compared to the base current.

The 2SA10220BL is also capable of withstanding higher collector current levels due to its TO-126 package design. The TO-126 package features a plastic encapsulated body which minimizes the risk of damage due to overloads. The package design also makes it suitable for high-temperature environments. Additionally, the 2SA10220BL features an hFE of 250 typ-300 max and an hFE amplification ranging from 5-100.

This transistor also offers excellent linearity over a wide range of collector currents, making it suitable for high-frequency switching circuits and amplifier cases where high levels of distortion are not required. The 2SA10220BL is also well suited for current sourcing applications.

In summary, the 2SA10220BL is a single transistor type with a wide range of applications across the audio, amplifier and switching circuits. Its TO-126 package design and high collector currents make it suitable for use in high-temperature applications. Additionally, this device features good linearity over a wide range of collector currents, making it suitable for current sourcing and high-frequency switching applications.

The specific data is subject to PDF, and the above content is for reference

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