2SA1515STPR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	32V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	180 @ 100mA, 3V
Power - Max:	300mW
Frequency - Transition:	150MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	SC-72 Formed Leads
Supplier Device Package:	SPT

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IntroductionThe 2SA1515STPR is a Single Polysilicon NPN Transistor from Toshiba. It is designed for a wide range of applications. The transistor features low noise, high gain and high input impedance, which makes it a good choice for amplifying high-speed signals. Its low collector-to-emitter saturation voltage makes it suitable for use in switching applications. The high-frequency response makes it suitable for use in signal-receiver, selection or mixer circuits.Application FieldThe 2SA1515STPR is used in high-speed signal amplification and signal selection circuits, such as wireless receivers and signal mixers. It is suitable for high-frequency applications, such as RF and microwave frequency circuits. The transistor can also be used in switching circuits, where its low saturation voltage and fast switching time make it a good choice.Working PrincipleThe 2SA1515STPR transistor consists of an emitter, base and collector. When current flows through the base, it creates a large amount of current flow between the collector and emitter. This current flow is usually amplified by the transistor, creating a high-gain output signal. The transistor can also be used to switch on and off a circuit, depending on the strength of the current at the base.ConclusionThe 2SA1515STPR is a single polysilicon NPN transistor from Toshiba. It is suitable for a wide range of applications, including high-speed signal amplification and signal selection, RF and microwave frequency circuits, and switching applications. The transistor features low noise, high gain and high input impedance. It also has a low collector-to-emitter saturation voltage and fast switching time.

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