| Allicdata Part #: | 2SA1593T-EOS-ND |
| Manufacturer Part#: |
2SA1593T-E |
| Price: | $ 0.48 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP 100V 2A TP |
| More Detail: | Bipolar (BJT) Transistor PNP 100V 2A 120MHz 1W Thr... |
| DataSheet: | 2SA1593T-E Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.42840 |
| 10 +: | $ 0.36792 |
| 100 +: | $ 0.27487 |
| 500 +: | $ 0.21596 |
| 1000 +: | $ 0.16688 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 2A |
| Voltage - Collector Emitter Breakdown (Max): | 100V |
| Vce Saturation (Max) @ Ib, Ic: | 600mV @ 100mA, 1A |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 100mA, 5V |
| Power - Max: | 1W |
| Frequency - Transition: | 120MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | TP |
| Base Part Number: | 2SA1593 |
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The 2SA1593T-E is a NPN type bipolar junction transistor (BJT) that is suitable for medium power applications. It is designed for use as a switching device or for linear amplification of low to medium signal levels. It is also known as an amplifier transistor because it is capable of amplifying small signals, such as those found in audio systems.
When using the 2SA1593T-E, it is important to know its application field and working principle. This device can be used in a wide range of electronic applications, including power supplies, inverters, linear amplifiers, switching and mechanical actuators, transducers, motor drivers, appliance controls, and cellular telephones.
The 2SA1593T-E has a simple, two-lead structure, which consists of an emitter and collector. The base is connected to the ground. It is also known as a three-terminal device since the base must be connected to the ground in order to make the transistor work. When a small voltage is applied to the base, the current between the collector and emitter increases. This action is known as amplification.
The 2SA1593T-E has a low collector-emitter saturation voltage and high current gain. This makes it an ideal transistor for switching applications. It is also highly suitable for power amplifications, since it can handle larger currents and voltages than other types of BJTs. In addition, its high thermal stability makes it a good choice for power supplies.
The 2SA1593T-E is rated for a maximum collector current of 5A and a maximum collector-emitter voltage of 40V. It has a high collector-to-emitter breakdown voltage of 60V and a low base-to-emitter saturation voltage of 0.2V. It has a low collector-to-base leakage current and a high gain-bandwidth product of 25MHz.
The 2SA1593T-E has a power dissipation rating of 300mW and can operate up to a maximum temperature of 150°C. Its switching time is also very short, with a turn-on time of 2.5μs and a turn-off time of 14μs. It also has a strong ruggedness due to its flat-base layout.
The 2SA1593T-E is suitable for use in a variety of medium power applications, such as audio amplifiers, switching and motor drivers, appliance controls, and cellular telephones. Its simple structure and high current gain make it the ideal choice for these applications. In addition, its high thermal stability and excellent ruggedness ensure that the device performs reliably in a wide range of use cases.
The specific data is subject to PDF, and the above content is for reference
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2SA1593T-E Datasheet/PDF