2SA1668 Allicdata Electronics
Allicdata Part #:

2SA1668-ND

Manufacturer Part#:

2SA1668

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Sanken
Short Description: TRANS PNP 200V 2A TO220F
More Detail: Bipolar (BJT) Transistor PNP 200V 2A 20MHz 25W Thr...
DataSheet: 2SA1668 datasheet2SA1668 Datasheet/PDF
Quantity: 5446
Stock 5446Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 200V
Vce Saturation (Max) @ Ib, Ic: 1V @ 70mA, 700mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 700mA, 10V
Power - Max: 25W
Frequency - Transition: 20MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Description

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2SA1668 is a single-channel NPN High-Power Transistor manufactured by Toshiba which is widely used in various electronic circuits due to its high performance and low cost. This transistor is ideal for use in high-power audio amplifiers and is commonly found in car audio systems, home theater systems, and other high-power sound equipment. It can also be used in other applications such as motor control and power switching circuits.

The 2SA1668 has a collector-to-emitter voltage rating of 70 volts and a collector current of 5 Amps, making it suitable for driving large power loads such as speakers and motors. The 2SA1668 also has a high-frequency response, making it an excellent choice for audio-frequency applications. The 2SA1668 is available in a TO-3 package and can be used with a variety of heat sinks.

The 2SA1668 is a BJT (Bipolar Junction Transistor) and is a single component consisting of three terminals, the base, collector, and emitter. The base terminal is used to control the flow of current between the collector and emitter terminals by varying the current applied to the base which in turn adjusts the current through the transistor. The workings of the 2SA1668 can be broken down into two major parts, the collector-emitter junction and the base-emitter junction.

The collector-emitter junction of the 2SA1668 is formed by two regions within the transistor. The first region is the highly doped N-type semiconductor on the collector side and the P-type semiconductor on the emitter side. When a small current is applied to the base terminal, a larger current is able to flow between the collector and emitter. This current is regulated by the amount of current applied to the base terminal, allowing the user to control the amount of current flowing between the collector and emitter.

The base-emitter junction of the 2SA1668 is formed by one N-type semiconductor and one P-type semiconductor. When a current is applied to the base terminal, the electrons from the N-Type semiconductor are drawn towards the P-Type semiconductor, and a current is established, allowing larger current to flow from the collector to the emitter. This current is also regulated by the current applied to the base terminal, allowing the user to control the amount of current flowing between the collector and emitter.

The 2SA1668 is a versatile transistor can be used in many different applications. It is often used in audio amplifiers, car audio systems, motor control, and power switching circuits. Its high-frequency response also makes it an excellent choice for audio-frequency applications. As a single component, the 2SA1668 also reduces assembly costs, making it popular with electronics hobbyists.

The specific data is subject to PDF, and the above content is for reference

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