2SA1746

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2SA1746 is a high-voltage, low-current PNP Bipolar Junction Transistor (BJT) used both for its industrial applications and as a complementary device for the 2SC4537 series NPN transistors. It utilizes a current gain from 10 to 39, a collector-base voltage of up to 60V, and a collector-emitter voltage of up to 30V. The transistor’s high-voltage capability makes it suitable for power circuits, such as high-voltage high-power switching applications. Due to its high current-gain, excellent frequency-response, and low-cost, it is used in many consumer electronics and commercial devices. It has a maximum current gain of 39 and a collector dissipation rating of 0.27 Watts.

As a PNP-type transistor, the 2SA1746 is powered from a negative power source, which provides its base current. The transistor may be connected to form a common-emitter, common-base, or common-collector amplifier. In common-emitter configuration, the emitter of the transistor is connected to ground, and its base and collector are connected to electrical signals to be amplified. When the base current is applied, the transistor conducts current through its collector-emitter junctions and produces a gain in the current or voltage applied to the collector. In common-base configuration, the base-emitter junction is reverse-biased, and the whole transistor works as an amplifier with a common connection between base and emitter. In common-collector configuration, the collector-emitter junction is forward-biased, and the transistor behaves like an emitter follower, with a voltage gain of slightly less than one.

In terms of its structure, the 2SA1746 can be divided into two parts- the base and the collector. The base is the semiconductor material that makes up the majority of the transistor body, and it is this part which is most exposed to the external environment. It is typically made up of layers of heavily-doped zones, separated by lightly-doped regions, to ensure the formation of two PNP junctions and good electrical isolation. The collector consists of two contact regions connected to the two PNP junctions formed from the base, and is made up of a collector region and a bulk region. The collector region is usually made of a highly-doped material, while the bulk region is made of a less-doped material.

In summary, the 2SA1746 is a versatile PNP BJT transistor which is widely used in many consumer electronics and commercial devices. Its low-cost, high-voltage capability, high current-gain, and excellent frequency-response make it suitable for both high-power switching applications, and low-power amplifier applications. Its two PNP junctions are formed from the base material, which consists of heavily-doped regions arranged in alternating layers and separated by lightly-doped regions, while the collector region consists of two contact regions connected to the two PNP junctions.

The specific data is subject to PDF, and the above content is for reference