2SA1954-A(TE85L,F) Allicdata Electronics
Allicdata Part #:

2SA1954-A(TE85LF)TR-ND

Manufacturer Part#:

2SA1954-A(TE85L,F)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PNP 12V 0.5A USM
More Detail: Bipolar (BJT) Transistor PNP 12V 500mA 130MHz 100m...
DataSheet: 2SA1954-A(TE85L,F) datasheet2SA1954-A(TE85L,F) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Power - Max: 100mW
Frequency - Transition: 130MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM
Description

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Transistors, a vital part of today\'s electronic circuitry, have a major impact on the function, performance and efficiency of electronic systems. Bipolar Junction Transistors (BJT) are one of the most commonly used type of transistor. 2SA1954-A(TE85L,F) is a single-sexual, NPN type, Bipolar Junction Transistor.

Application Field

2SA1954-A(TE85L,F) transistor is mainly used in the small-signal digital circuits. It is primarily used in metering circuits and analog switches for digital circuits 4V, TTL logic. It is employed for various commercial and industrial applications like automotive electronics, electronic microscopes, telephone equipment, electronic instruments, radios, TV, etc.

Working Principle

In the 2SA1954-A(TE85L,F) transistor, electrons diffuse through a thin channel of N-doped (N-type) silicon semiconductor material. This semiconductor material works as a junction between two semiconductor regions- an "emitter" (N-type) and a "collector" (P-type). This forms an "NPN" type transistor. When voltage is applied across an NPN transistor, current flows from the collector to the emitter. As the current increases, a positive voltage drop appears at the collector due to the resistance of the base-collector junction. This creates a collector “bias” voltage.

The transistor acts as an amplifier and rectifier, providing a low-level current to be changed into a higher-level current. This property makes it suitable for multiple uses. For example, it can be used to amplify audio signals or to detect circuit signals of different levels.

Furthermore, when a small signal is applied to the base of the transistor, it acts as an “on/off” switch, allowing current flow either in the forward or reverse direction, depending on the input signal. This feature makes the transistor a useful component in time-multiplexed circuits.

The 2SA1954-A(TE85L,F) transistor is widely used for its versatility, efficiency and reliability. Its features of ease of use, low cost and simple structure make it a common choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

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