Allicdata Part #: | 2SB1143SOS-ND |
Manufacturer Part#: |
2SB1143S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 50V 4A TO-126ML |
More Detail: | Bipolar (BJT) Transistor PNP 50V 4A 150MHz 1.5W Th... |
DataSheet: | 2SB1143S Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 700mV @ 100mA, 2A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 140 @ 100mA, 2V |
Power - Max: | 1.5W |
Frequency - Transition: | 150MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126ML |
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The 2SB1143S is a single Bipolar (BJT) Transistor which has a power dissipation of 500 mW and collector current ratings of up to 500 mA. It has an hFE rating of up to 135, and a maximum and minimum VCE saturation of -1V and 1V respectively. The hFE of the 2SB1143S varies greatly depending on the current gain, which is dependent on the collector current. The hFE values range from 10 to 200. This makes it suitable for a wide range of applications and makes it a great choice for various circuits.
The 2SB1143S can be used for a variety of purposes, including level shifting, current amplification, and base current switching. It can be used to provide a stable reference voltage or as a bridge for AC signals. It is also widely used for level shifting, voltage switching, relays and amplifiers amongst other applications. In addition, the 2SB1143S is often used in applications such as load switches, relays, current mirrors, damping, linear amplifiers and other sound amplifiers.
The 2SB1143S features an NPN type configuration, with an emitter-base junction as the main gate. In an NPN configuration, the emitter is connected to ground and the collector is connected to the positive voltage rail. The base is then connected to the signal input. When a positive voltage is applied to the base, the transistor allows current to flow from the collector to the emitter. When the base voltage is removed, the transistor blocks current from flowing by reverse biasing the junction.
The working principle of the 2SB1143S is based on the fact that current can flow between the base and the collector only when the voltage between Base and Emitter is 0.2V or more than the base-emitter voltage of the transistor. When current is allowed to flow between the base and the collector, it produces a current gain hFE. The current gain is proportional to the current between the base and the emitter and the voltage between base and emitter. This current gain hFE and the collector current Ic are the two main characteristics of the 2SB1143S transistor.
The 2SB1143S is a very versatile transistor and can be used for various applications, from load switches and relays to current mirrors and damping. Its hFE ratings vary depending on the collector current, and is suitable for many different types of circuits. It offers great value for money and is an excellent choice for use in a variety of electrical applications.
The specific data is subject to PDF, and the above content is for reference
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