Allicdata Part #: | 2SB1243TV2QTB-ND |
Manufacturer Part#: |
2SB1243TV2Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PNP 50V 3A ATV |
More Detail: | Bipolar (BJT) Transistor PNP 50V 3A 70MHz 1W Throu... |
DataSheet: | 2SB1243TV2Q Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 200mA, 2A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 500mA, 3V |
Power - Max: | 1W |
Frequency - Transition: | 70MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 3-SIP |
Supplier Device Package: | ATV |
Base Part Number: | 2SB1243 |
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The 2SB1243TV2Q is a transistor used for a variety of applications, but is primarily aimed at industrial and medical applications. It is a single bipolar junction transistor (BJT) with a very wide range of operating voltages, from as low as 2.2V to as high as 85V. It has a maximum power dissipation of 3W and a maximum collector current rating of 0.9A, making it suitable for a wide range of applications which require high wattage and powerful current control.
The 2SB1243TV2Q is suitable for a variety of applications including, but not limited to AC/DC conversion, low level signal amplification, switching, and RF applications. In addition, it can be used for regenerative high frequency amplifiers, audio and video frequency power amplifiers, or even to control high power loads such as lamps and motors.
The 2SB1243TV2Q is a silicon epitaxial transistor with a NPN type component. It uses an N-type collector, base, and emitter junction that, when operating correctly, forms contacts that are resistant to any high voltage, temperature, or reverse-biased leakage. This makes the 2SB1243TV2Q well suited for applications that require medium and high-power, as well as any applications that require high reliability.
The working principle of the 2SB1243TV2Q involves the flow of electrons between the N- and P-type of semiconductor material. When properly biased, electrons can move from the N-type collector region to the P-type base region, and from there, to the N-type emitter region. The flow of electrons from the collector to the emitter region is called transistor action, and it is this action that produces a voltage gain in the 2SB1243TV2Q device.
In order to achieve proper transistor action, the 2SB1243TV2Q must be properly biased. This means that the base voltage must remain between 4.0V and 4.5V for proper operation. Additionally, the collector-base (CB) junction must be forward biased, and the emitter-base (EB) junction should remain reverse biased. Proper biasing ensures that the transistor remains in the active region, allowing the signal to be amplified.
In addition to being used in applications such as industrial and medical, the 2SB1243TV2Q is also used in consumer electronic products like home appliances, computers, and consumer electronics. This is due to its high power rating, high reliability, and low cost. It can also be used in low-level signal applications such as audio amplifiers, speakers, and control systems, as well as in high power applications such as power supply regulators and power switching circuits.
The 2SB1243TV2Q is a versatile transistor that can be used in a wide variety of applications, from consumer electronics to industrial applications. Its wide range of operating voltages, high power dissipation, and excellent reliability make it a popular option for many electrical engineering applications. With its wide range of applications and its excellent transistor action, the 2SB1243TV2Q is a popular option for any application involving signal amplification, switching, and high power circuits.
The specific data is subject to PDF, and the above content is for reference
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