2SB1204S-TL-E

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	8A
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 200mA, 4A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	140 @ 500mA, 2V
Power - Max:	1W
Frequency - Transition:	130MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	2-TP-FA
Base Part Number:	2SB1204

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2SB1204S-TL-E is a kind of single NPN transistors, known as Bipolar Junction Transistors (BJT). It is used in amplifier circuits and switching circuits, and can amplify or switch signals, usually electrical current and voltage.2SB1204S-TL-E is a surface mount device that can easily fit even the most circuit boards with limited space. It is designed to be resistant to moisture, heat, and radiation, and therefore can be used in a wide variety of applications. Its maximum power dissipation is 3W, and it also has a good slew rate.The working principle of 2SB1204S-TL-E is based on the concept of a three-terminal device, which incorporates three basic regions of semiconductor material. A P-Type semiconductor material forms the center region called base, while two N-type materials form the regions called collector and emitter.When an electric potential is applied to the base of the transistor, it creates an electric field within the device, which causes mobile electrons to move through the material when the transistor is switched on. As the electrons from the base move to the collector terminal, the current inside the transistor increases resulting in an amplification of the electric potential at the collector terminal. Depending on the type of transistor, electrons may also move from the collector terminal to the emitter terminal, thus reducing current. This is known as the “transistor action”.2SB1204S-TL-E can be used in a variety of applications such as amplifiers, switching circuits, logic circuits, radio-frequency (RF) amplifiers, and audio amplifiers. It has a low noise level, making it well suited for low signal level radio applications. Due to its low on resistance, it is well suited for signal switching and logic applications, while its low collector-emitter saturation voltage makes it suitable for a range of linear and switched-mode power supply applications.2SB1204S-TL-E also has a wide range of features and characteristics which make it suitable for a variety of different applications. Its minimum collector-emitter saturation voltage is 0.2V, its maximum collector-emitter voltage (VCE) is 30V, its maximum collector current (IC) is 0.5A, and its minimum collector current (IC) is 10mA. It has an operating temperature range of -55°C to 150°C, while its maximum storage temperature is 150°C.In addition, its maximum collector dissipation (PD) is 3W, its maximum junction temperature (TJ) is 150°C, its power gain (hFE) is 25 to 75, its gain-bandwidth product (fT) is 6MHz, and its forward current transfer ratio (Hfe) is 300. This makes it well-suited for many different applications including high-power and high-frequency circuits, as well as power management systems, logic circuits, and RF amplifiers.In summary, 2SB1204S-TL-E is a single NPN transistor with a wide range of features and characteristics, making it well suited for a variety of different applications. It is designed to be resistant to moisture, heat, and radiation, and therefore can be used in a wide variety of applications. Its maximum power dissipation is 3W, and it has a good slew rate, making it an ideal choice for a wide range of amplifiers, switching circuits, logic circuits, RF amplifiers, and audio amplifiers.

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