
Allicdata Part #: | 2SB1218ARLTR-ND |
Manufacturer Part#: |
2SB1218ARL |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PNP 45V 0.1A SMINI 3P |
More Detail: | Bipolar (BJT) Transistor PNP 45V 100mA 80MHz 150mW... |
DataSheet: | ![]() |
Quantity: | 9000 |
3000 +: | $ 0.04276 |
6000 +: | $ 0.03849 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 210 @ 2mA, 10V |
Power - Max: | 150mW |
Frequency - Transition: | 80MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SMini3-G1 |
Base Part Number: | 2SB1218 |
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The 2SB1218ARL is a single bipolar junction transistor (BJT) designed for a wide range of applications. The transistor has a low power dissipating physically small outline surface mount package. This 2SB1218ARL can be used in computer and communication applications such as power amplifiers, audio amplification, and other signal processing applications.
The 2SB1218ARL is a NPN transistor with a maximum collector to emitter voltage of 40V. It has a maximum collector current rating of 0.25A. The product package is composed of a compact 3-pin block lead that allows for easy mounting and has a total package size of 2.6mm x 2.1mm. It is a low power transistor with a power dissipation rating at 25mW. In addition, it can handle an operating temperature range of -40°C to + 125°C.
The application fields and working principles of the 2SB1218ARL are numerous. As a general-purpose transistor, it can be used in a variety of signal processing applications such as amplifier, audio amplifiers, and digital logic circuits. As an amplifier, the 2SB1218ARL can be used to amplify small signal from input to a higher level of voltage at the output. For example, in an audio amplifier, an AC voltage signal is fed into the 2SB1218ARL transistor for the purpose of increasing the gain on the signal through the transistor. The transistor then amplifies the signal and outputs it to the speaker.
The working principle behind the 2SB1218ARL is BJT. A BJT is a kind of three terminal devices, which are current-controlled current devices. The basic principle of BJT is that they are able to amplify small electrical current signals and convert them into higher level amplified AC signals with the help of a small base current.
The base-emitter junction is a critical factor of BJTs; it acts as a voltage dependent switch which is controlled by the small base current. The forward-biased base-emitter junction will allow current flow to the collector. With an increase of small currents in the base connections, the base-emitter junction will become more forward bias, and more current will be allowed to flow from base to collector. The base-collector reverse bias junction will block the flow of current in the collector and hence, the voltage is amplified from the collector.
The 2SB1218ARL has a low saturation voltage of 0.65V and can be used for various signal processing purposes. The transistor is versatile and can= be used for various geometries or signal processing applications. It can be used for the amplifier, for signal regeneration and for signal conversion.
The 2SB1218ARL is a versatile single bipolar junction transistor that is designed for a wide range of signal processing applications. Its application fields are numerous, as they are suited for use in a variety of amplifier, audio amplifiers and digital logic circuits. The working principles behind the 2SB1218ARL are based on BJTs, which use small base currents to create voltage to amplify signals. With its low current rating and power dissipation rating, the 2SB1218ARL is an efficient and reliable transistor.
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