2SB1260T100R Allicdata Electronics
Allicdata Part #:

2SB1260T100RTR-ND

Manufacturer Part#:

2SB1260T100R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PNP 80V 1A SOT-89
More Detail: Bipolar (BJT) Transistor PNP 80V 1A 100MHz 2W Surf...
DataSheet: 2SB1260T100R datasheet2SB1260T100R Datasheet/PDF
Quantity: 2000
Stock 2000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
Power - Max: 2W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3
Base Part Number: 2SB1260
Description

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The 2SB1260T100R is a PNP transistor of the type known as bipolar junction transistors, or BJT. Transistor technology forms the basis of many electronic devices, and the PNP type is just one of many available. The 2SB1260T100R is characterized by its low power dissipation, high gain, and fast switching—making it ideal for use in a variety of applications.

The 2SB1260T100R is a PNP type transistor, meaning it has an N-type and a P-type semiconductor layer connected together. The P-type layer consists of a large number of positive charge carriers, while the N-type layer consists of a larger number of negative charge carriers. When a voltage is applied to the transistor\'s base, it causes the P-type and N-type material to become connected, effectively forming a current flowing path between the emitter and collector. This current flow is then controlled by the voltage at the base, allowing for the regulation of current flow through the transistor.

The 2SB1260T100R\'s low power dissipation and high gain provide an excellent solution for use in various applications. Its low power dissipation makes it well-suited for applications that require a steady supply of voltage and current, such as switchcalls, audio amplifiers, and optical sensors. Its high gain also makes it suitable for use in motor control, such as for brushless motor drives and stepper motor control.

The 2SB1260T100R\'s fast switching capability is another major advantage. This allows the transistor to rapidly switch between different current paths, which can be used to control the speed and direction of a motor, adjust the amplitude of an audio signal, or quickly switch between different sensors. As such, the 2BS1260T100R is commonly used in applications that require precise control of current flow, such as in sophisticated microcontroller circuitry.

The 2SB1260T100R can also be used in a variety of different types of circuits. For example, it can be used as part of a Darlington pair configuration to increase the overall current gain of the transistor pair, and it can also be used in a Darlington connection to create a low-impedance output stage. Furthermore, the transistor can be combined with other types of transistors to form a complementary pair, allowing for even more precise control of current flow. This makes the 2SB1260T100R an extremely versatile and indispensable component for many types of electronics.

In conclusion, the 2SB1260T100R is an excellent PNP transistor for a variety of applications. It has a low power dissipation, high gain, and fast switching capability which make it an ideal choice for many types of circuits. Furthermore, its versatility makes it capable of handling a wide range of current and voltage needs, making it an invaluable addition to any electronic circuit. Because of these advantages, it is one of the most widely used transistors in the world.

The specific data is subject to PDF, and the above content is for reference

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