| Allicdata Part #: | 2SC4793FM-ND |
| Manufacturer Part#: |
2SC4793(F,M) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS NPN 230V 1A TO220NIS |
| More Detail: | Bipolar (BJT) Transistor NPN 230V 1A 100MHz 2W Thr... |
| DataSheet: |  2SC4793(F,M) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 1A |
| Voltage - Collector Emitter Breakdown (Max): | 230V |
| Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 5V |
| Power - Max: | 2W |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220NIS |
Description
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2SC4793 is a general purpose high-frequency bipolar NPN transistor; it is mainly used for a wide range of amplification, oscillators, and switching applications. It belongs to the family of single NPN bipolar junction transistors (BJTs). This type of BJT has an NPN structure with a three-terminal design, namely the emitter (−), base (B), and collector (+) terminals. The 2SC4793 is specifically designed to provide high power gain while also functioning at temperatures up to +125°C. This transistor is generally used in signal processing and power amplification circuits.
The NPN 2SC4793 BJT is a current-controlled device, where the combination of current through the base-emitter junction and base-collector junction sets up both of the two main unipolar junctions in the bipolar device. The two main characteristic properties of the NPN transistor include its current gain, β, and its Forward Base-Emitter Voltage of VBE. β is the ratio of collector current to the base current and usually ranges from 50 to 800 for the 2SC4793. VBE is the voltage across the Base-Emitter junction of the BJT and is usually around 0.7 V for the 2SC4793. An advantage of the BJT is that the current through the base junction controls the current that flows through the collector and emitter terminals.
The 2SC4793 has a wide variety of applications because of its high current gain and reasonable forward base-emitter voltage. Some of the general applications include switching and signal processing amplifiers, switching regulator circuits, and active feedback circuits. Moreover, the transistor can be also used in oscillator circuits to create a pulse wave or continuous wave with a sinusoidal shape. It can also provide a dependable amplification of both digital and analog signals. The high gain property of the transistor makes it ideal for use in Class-B amplifiers and multivibrators.
In conclusion, the 2SC4793 is a single NPN bipolar junction transistor that is perfect for use in audio amplifiers, switching, and feedback circuits and can achieve high current gains. It has a reasonable forward base-emitter voltage, making it suitable for most general-purpose applications. Its common applications include amplifiers, oscillators, and switching circuits, and it also provides reliable amplification of both digital and analog signals.
The NPN 2SC4793 BJT is a current-controlled device, where the combination of current through the base-emitter junction and base-collector junction sets up both of the two main unipolar junctions in the bipolar device. The two main characteristic properties of the NPN transistor include its current gain, β, and its Forward Base-Emitter Voltage of VBE. β is the ratio of collector current to the base current and usually ranges from 50 to 800 for the 2SC4793. VBE is the voltage across the Base-Emitter junction of the BJT and is usually around 0.7 V for the 2SC4793. An advantage of the BJT is that the current through the base junction controls the current that flows through the collector and emitter terminals.
The 2SC4793 has a wide variety of applications because of its high current gain and reasonable forward base-emitter voltage. Some of the general applications include switching and signal processing amplifiers, switching regulator circuits, and active feedback circuits. Moreover, the transistor can be also used in oscillator circuits to create a pulse wave or continuous wave with a sinusoidal shape. It can also provide a dependable amplification of both digital and analog signals. The high gain property of the transistor makes it ideal for use in Class-B amplifiers and multivibrators.
In conclusion, the 2SC4793 is a single NPN bipolar junction transistor that is perfect for use in audio amplifiers, switching, and feedback circuits and can achieve high current gains. It has a reasonable forward base-emitter voltage, making it suitable for most general-purpose applications. Its common applications include amplifiers, oscillators, and switching circuits, and it also provides reliable amplification of both digital and analog signals.
The specific data is subject to PDF, and the above content is for reference
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