2SC4134S-E Allicdata Electronics
Allicdata Part #:

2SC4134S-E-ND

Manufacturer Part#:

2SC4134S-E

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 100V 1A TP
More Detail: Bipolar (BJT) Transistor NPN 100V 1A 120MHz 800mW ...
DataSheet: 2SC4134S-E datasheet2SC4134S-E Datasheet/PDF
Quantity: 1000
1000 +: $ 0.19676
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Power - Max: 800mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TP
Base Part Number: 2SC4134
Description

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2SC4134S-E is a kind of bipolar junction transistor (BJT) in single form. It is used in the fields of amplifier, switch, and driver, etc. This article will introduce its working principle and application field in detail.

Working Principle of 2SC4134S-E

2SC4134S-E bipolar junction transistor (BJT) consists of three layers of doped semiconductor material. Base is the central layer and it is sandwiched between the collector and the emitter layer. With the application of voltage to the base-emitter junction, electrons are injected from the base into the collector and holes from the collector into the base. This phenomenon is known as minority carrier injection. Thus, current flows from the collector to the emitter. Therefore, the 2SC4134S-E is a NPN type transistor.

Application Fields of 2SC4134S-E

2SC4134S-E has many applications of various fields. It is widely used in audio amplifiers, low power RF amplifiers, processors, switching and driver circuits. In addition, it can also be used in automobile electronic devices and industrial electronic equipment.

Audio Amplifier

2SC4134S-E is widely used in audio amplifiers. It can provide high power output at a relatively low voltage, thus it is suitable for low power audio amplifiers. The gain of the amplifier can be adjusted by varying the current through the base-emitter junction. Furthermore, the 2SC4134S-E also has low thermal resistance, which makes it an ideal choice for audio applications.

Low Power RF Amplifier

2SC4134S-E can also be used in low power RF amplifiers. It has very low noise characteristics, which makes it suitable for low power RF amplifiers. Moreover, the 2SC4134S-E also has good linearity, which makes it an ideal choice for low power RF amplifiers.

Processors

The 2SC4134S-E can also be used in processors. It has fast switching speed, which makes it suitable for high-speed processing. Furthermore, the 2SC4134S-E also has low power consumption, which makes it an ideal choice for processors.

Switching and Driver Circuits

The 2SC4134S-E is also suitable for switching and driver circuits. It has fast switching speed, which makes it suitable for high-speed switching applications. Furthermore, the 2SC4134S-E also has low power consumption, which makes it an ideal choice for driver circuits.

Automobile Electronic Devices and Industrial Electronic Equipment

The 2SC4134S-E can also be used in automobile electronic devices and industrial electronic equipment. It has good electrical stability and thermal reliability, which makes it suitable for various applications. Furthermore, the 2SC4134S-E also has low power consumption, which makes it an ideal choice for industrial electronic equipment.

Conclusion

The 2SC4134S-E bipolar junction transistor is a versatile device with many applications in various fields. It has fast switching speed, good linearity, low power consumption, good electrical stability and thermal reliability, which makes it suitable for audio amplifiers, low power RF amplifiers, processors, switching and driver circuits, as well as automobile electronic devices and industrial electronic equipment.

The specific data is subject to PDF, and the above content is for reference

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