2SC4488T-AN Allicdata Electronics

2SC4488T-AN Discrete Semiconductor Products

Allicdata Part #:

2SC4488T-ANOSTR-ND

Manufacturer Part#:

2SC4488T-AN

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 100V 1A NMP
More Detail: Bipolar (BJT) Transistor NPN 100V 1A 120MHz 1W Thr...
DataSheet: 2SC4488T-AN datasheet2SC4488T-AN Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: 3-NMP
Description

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2SC4488T-AN application field and working principle

2SC4488T-AN is a single NPN transistor, developed by Toshiba Corporation. This transistor is particularly suited for applications in audio, power modules, and speed regulators. It is a high power transistor with a maximum distributed power of 80W and a rated DC collector current of 1A at 25°C.

2SC4488T-AN is made with a silicon epitaxial planar base and is encapsulated in a plastic case in a TO-92 package. This planar type base is created on a semiconductor substrate material consisting of both N and P layers. The current flow is in the form of holes and electrons, not directly from one end of the circuit to the other. The holes flow from the N layer to the P layer, with electrons flowing from the P layer to the N layer.

The transistor is activated by controlling the base-emitter junction, allowing it to act like an electronic switch. When the base-emitter junction is biased to be slightly forward, the transistor turns on and the collector current starts to flow. As the current rises, the transistor reaches its stable operating point, which is characterized by a maximum collector-emitter voltage. At this voltage, the collector current starts to decrease and the junction becomes reverse biased and the transistor turns off. In this way, the transistor is able to control the amount of current in the circuit.

2SC4488T-AN can also be used in pulse circuits for switching applications as well as for low-distortion audio power amplifiers, radio receivers and transmitters. The features of this transistor are very impressive, including an excellent high-frequency performance, good thermal stability and a wide range of operating temperature. Furthermore, the transistor has a very low leakage current and an excellent high-side stability. The transistor is also designed to be compatible with low level logic systems and requires very low input current to turn it on.

Overall, 2SC4488T-AN is a great choice for a wide range of applications due to its excellent features and capabilities. With its superior performance and wide range of operating temperature, this transistor is well suited for use in a variety of audio, power modules, and speed regulator applications. Its wide range of operating temperature, low leakage current, excellent high-side stability, and compatibility with low level logic systems make it a great choice for those looking for a reliable, cost-effective solution for their applications.

The specific data is subject to PDF, and the above content is for reference

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