2SC4881,LS1SUMIF(M

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The 2SC4881, LS1SUMIF(M is a single transistor type in the bipolar junction transistor (BJT) family. The device is capable of operating at high frequency and high power levels. It is a silicon n-p-n device that is used in various applications such as radio frequency and microwave power amplifying, switching and various other power switching applications. This device is a versatile, low cost, and efficient solution for a variety of high values applications.

The 2SC4881, LS1SUMIF(M is a device with a high forward current gain (hFE). It is also equipped with a low saturation voltage and low operating voltage. The device has an operating temperature range of -55°C to +150°C and is ESD safe for use in industrial applications. The device features low on-state resistance and good thermal stability, which makes it an ideal choice for high power applications.

The 2SC4881, LS1SUMIF(M is a silicon n-p-n device that operates as a transistor switch, which controls the current flow in and out of the source or drain of the device. When the device is switched on, the current flow is allowed to pass through the transistor and when the device is switched off, the source or drain is either depleted in the N-channel or has a voltage spike in the P-channel, thus preventing current flow.

The semiconductor is normally used with a terminal base to increase the hFE value and reduce the on-state resistance. The semiconductor is typically supplied with an integrated gate resistor which is used to control the gate current. The gate resistor helps in stabilizing the performance of the device over a wide range of gate voltages and currents. This helps in providing consistent performance of the transistor over varying temperatures.

The 2SC4881, LS1SUMIF(M is commonly used in wireless radio and radio frequency applications that require high current and power applications. It can be used in various automotive and consumer applications such as remote controls, door locks, power amplifiers, and audio amplifiers, among many others. The 2SC4881, LS1SUMIF(M is an excellent choice for applications that require high efficiency, power, and performance.

The working principle of the 2SC4881, LS1SUMIF(M is based on transistor switching. The device is capable of controlling the current flow in and out of the source or drain. When the device is switched on, the current flow is allowed to pass through the transistor and when the device is switched off, the source or drain is either depleted in the N-channel or has a voltage spike in the P-channel, thus preventing current flow. The device can also be used in saturating and cutoff modes.

The 2SC4881, LS1SUMIF(M is an excellent choice for high frequency and high power applications. It is capable of operating at high frequency and excellent power levels. It has a low on-state resistance and good thermal stability, which makes it an ideal choice for high power applications. The device also features a low saturation voltage, high hFE value, and low operating voltage.

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