2SC4489T-AN

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 100mA, 5V
Power - Max:	1W
Frequency - Transition:	120MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	SC-71
Supplier Device Package:	3-NMP

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2SC4489T-AN is a high breakdown voltage (BV DSS) and low saturation voltage (V CE(SAT), V CE(SAT) ) bipolar junction transistor (BJT). It is designed to provide high frequency switching and amplification applications in continental climates. The maximum current of the device is 250mA, and it can operate at up to 50V. The device also has a low maximum junction temperature (Tjmax) of 150°C. This makes it suitable for temperature sensitive applications such as automotive, industrial and communications.The device is made up of three terminals. The base is the control terminal and is used to control the current flow between the emitter and the collector. The collector is the output terminal and it is used to provide amplified output voltage and current. The emitter is the input terminal and is used to supply the standard voltage, i.e. the input signal to the device.2SC4489T-AN is a NPN bipolar junction transistor. When the base terminal is forward biased more than the base-emitter junction, the voltage at the collector is increased. This helps to control the current flow between the emitter and collector terminals. The current flow is proportional to the voltage across the base-emitter junction and is determined by the equation:I C = β*I Bwhere I C is the collector current and I B is the base current. This is known as the common emitter configuration of the BJT. The beta (β) value of 2SC4489T-AN is typically between 30 and 120. This is important in determining the relationship between the base current and the collector current in the device.In general, the BJT is used in switches, amplifiers and oscillators. 2SC4489T-AN can be used in a wide variety of applications such as for relay drivers, pulse transformers, flyback drivers, current regulators in power supplies and in H-bridges. It can also be used in circuit switching applications, as well as in RF amplifiers in communications systems.The unique feature of the device is its very low saturation voltage of 0.2V. This makes it suitable for applications which require low voltage drop across load. It also has a low collector-emitter leakage current, which makes it suitable for use in high accuracy switching circuits.In addition to its small size, the device has a low on-resistance of 0.3 ohm. This allows it to handle higher switching frequencies with greater efficiency. It is also highly reliable, with a minimum guaranteed life of 1000 hrs.In conclusion, 2SC4489T-AN is a miniaturized NPN bipolar junction transistor that is suitable for use in many high frequency switching and amplification applications. It has excellent switching characteristics, a low on-resistance and a very low saturation voltage, making it ideal for use in low voltage drop circuits. Furthermore, its high reliability makes it suitable for long term operation in harsh conditions.

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