Allicdata Part #: | 2SC4793TOA1F(J-ND |
Manufacturer Part#: |
2SC4793,TOA1F(J |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 1A 230V TO220-3 |
More Detail: | Bipolar (BJT) Transistor NPN 230V 1A 100MHz 2W Thr... |
DataSheet: | 2SC4793,TOA1F(J Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 230V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 5V |
Power - Max: | 2W |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220NIS |
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The 2SC4793,TOA1F(J) is a member of the family of transistors providing the performance that the industry has come to trust in order to provide reliable signal switching devices. 2SC4793,TOA1F(J) is primarily classified as a bipolar junction transistor (BJT) that is single in nature. The devices are commonly used in a variety of applications and as such, it is important to understand the in-depth workings of the device and its associated electrical specifications.
The 2SC4793,TOA1F(J) comes in an epoxy molded package and is capable of sourcing or sinking up to 12A of current in through its collector. This device features an NPN type of construction and it operates with a voltage such that the collector is always more positive than the emitter, with multiple voltage types available for a variety of different circuit applications. Additionally, based on the beta or hFE of the device, the collector current can be accurately adjusted and set with a base current.
The 2SC4793,TOA1F(J) is capable of higher power gains due to its construction, allowing it to be used in circuits and applications that require greater current carrying capabilities. It can also be used to amplify low power signals, as the device works in such a way that it amplifies the input current from what is received from the base. Additionally, this device has a built-in base-emitter protection diode, which helps to protect against external transient voltage spikes and to improve the overall process of driving the device.
Applications for the 2SC4793,TOA1F(J) span across a wide range of industries, from automotive to telecommunications and everything in between. It is commonly used in power electronic circuits, such as those found in telecom lines, power supplies, and more. It can also be used effectively in industrial process control systems, as well as in general-purpose audio and video switch circuits.
The 2SC4793,TOA1F(J)’s working principle is simple yet effective. The device is operated by three terminals, the emitter, collector, and base. Applying a voltage across the collector and emitter causes a current to flow from the emitter onto the collector. The amount of the current is dependent on the application of the base current, or the base-emitter voltage if it is a unipolar junction transistor. This current then amplifies the base current and produces the necessary output current. It is important to note that the device needs to be properly powered for it to effectively operate.
Overall, the 2SC4793,TOA1F(J) is a reliable and popular device which can be used in a wide range of applications. Due to its higher power gains and built-in base-emitter protection, the device offers reliable and efficient signal switching performance. Understanding the fundamentals of this device’s working principle allows it to be used in an easier and more transparent manner for any desired task.
The specific data is subject to PDF, and the above content is for reference
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