2SC4559 Allicdata Electronics
Allicdata Part #:

2SC4559-ND

Manufacturer Part#:

2SC4559

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN 400V 7A TO-220F
More Detail: Bipolar (BJT) Transistor NPN 400V 7A 10MHz 2W Thro...
DataSheet: 2SC4559 datasheet2SC4559 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 7A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 3A, 5V
Power - Max: 2W
Frequency - Transition: 10MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F-A1
Description

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2SC4559 is a single bipolar junction transistor (BJT) commonly used in audio amplifiers and pre-amplifiers. It is a general-purpose device with a wide range of applications. It is used in transistor switch circuit applications as well as in audio amplifier and pre-amplifier circuits. It is used in digital as well as in linear applications.

In terms of transistor characteristics, 2SC4559 has a collector current rating of up to 500 mA, which is well suited for most high-powered audio amplifier applications. The device has a maximum voltage rating of 30 V, making it suitable for circuits that operate in higher voltage environments. It has a maximum storage temperature of 175°C and a maximum operating temperature of 150°C, making it suitable for high temperature environments. The device has a hFE rating of 110, making it well-suited for most audio pre-amplifier applications.

The working principle of a 2SC4559 is based on the BJT structure. A BJT consists of three layers of semiconductor material, the emitter, base, and collector. The flow of current is controlled by the forward bias applied to the base of the device. When a forward bias is applied to the base of the device, the current between the base and emitter increases, which in turn increases the current between the base and collector, which is known as collector current. The resulting collector current is proportional to the forward bias applied to the base of the device.

2SC4559 is a versatile device and can be used in a variety of applications. It is commonly used in audio amplifier and pre-amplifier circuits due to its high current and low voltage ratings. It can also be used in transistor switch circuits, digital circuits, and linear applications. The device is also great for high temperature environments due to its high temperature ratings.

In conclusion, 2SC4559 is a single bipolar junction transistor that can be used in a variety of applications. It has a collector current rating of up to 500 mA, making it suitable for use in high-powered audio amplifier circuits. The device also has a maximum voltage rating of 30 V, making it suitable for higher voltage applications. Additionally, 2SC4559 has a maximum storage temperature of 175°C and a maximum operating temperature of 150°C, which makes it suitable for high temperature environments. It also has an hFE rating of 110, making it well-suited for most audio pre-amplifier applications. The working principle of a 2SC4559 is based on the BJT structure, in which the current between the emitter and collector is controlled by a forward bias applied to the base of the device.

The specific data is subject to PDF, and the above content is for reference

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