2SC4618TLN

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	25V
Frequency - Transition:	300MHz
Noise Figure (dB Typ @ f):	--
Gain:	--
Power - Max:	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	82 @ 1mA, 6V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-75, SOT-416
Supplier Device Package:	EMT3
Base Part Number:	2SC4618

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Introduction to 2SC4618TLN

2SC4618TLN is a type of transistor manufactured by Toshiba. It is a NPN bipolar Silicon transistor specifically designed to work as a radio frequency (RF) amplifier. This transistor has a high current gain, low noise and low distortion which makes it well-suited for a variety of applications. In addition, it can be used in both DC and AC circuits, making it a very versatile choice for many projects.

Application Field of 2SC4618TLN

2SC4618TLN transistors can be used for a variety of applications, especially in RF amplifier circuits. They are ideal for use in automotive audio systems, base stations, portable radios and mobile communication devices. Additionally, they are suitable for use in a variety of audio, computer, and instrumentation projects, including high-speed switching, general-purpose amplifiers, and audio modulation circuits.Moreover, these transistors can also be used in a wide range of medical, industrial and aerospace equipment, as well as military, transport and communication systems. 2SC4618TLN transistors have a wide range of operating temperature ranges, and their high-performance characteristics make them suitable for low-power applications where higher current gains are required.

Working Principle of 2SC4618TLN

2SC4618TLN transistors utilize NPN bipolar Junction transistors (BJT) technology. This technology allows the transistor to act as both an amplifier and a switch, amplifying and attenuating a signal depending on the operating bias applied to its base. The base-to-emitter voltage, also known as turn-on voltage is applied to the transistor’s base through an external circuit. This voltage causes current flow between the emitter and collector. As the input voltage increases, the current increases and the transistor amplifies the signal. Conversely, when the input voltage decreases, the current decreases and the transistor reduces the signal gain.

Conclusion

2SC4618TLN is a type of transistor designed to amplify and attenuate signals depending on the operating bias applied to its base. It has a high current gain, low noise and low distortion, making it ideal for use in RF amplifier circuits, automotive audio systems, base stations and a range of medical, industrial, aerospace and military applications. Additionally, it utilizes NPN bipolar Junction transistors technology, which allows it to act as both an amplifier and a switch.

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