2SC4713KT146S Allicdata Electronics
Allicdata Part #:

2SC4713KT146STR-ND

Manufacturer Part#:

2SC4713KT146S

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN 6V 50MA SOT-346
More Detail: RF Transistor NPN 6V 50mA 800MHz 200mW Surface Mou...
DataSheet: 2SC4713KT146S datasheet2SC4713KT146S Datasheet/PDF
Quantity: 1000
1 +: $ 0.08000
10 +: $ 0.07760
100 +: $ 0.07600
1000 +: $ 0.07440
10000 +: $ 0.07200
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): --
Gain: --
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 5mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3
Base Part Number: 2SC4713
Description

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The 2SC4713KT146S is a type of RF transistor that belongs to the category of bipolar junction transistors (BJTs). It is a three terminal device, usually with an emitter, a collector and a base. The purpose of an RF transistor is to amplify radio frequency signals. The 2SC4713KT146S is specifically designed for radio-frequency (RF) applications in the 28-1000 MHz range.

The 2SC4713KT146S is most commonly used for RF amplification in wide variety of radio products such as cordless telephones, two-way radio sets, PDC base stations, and microwave radio systems. It can also be used in consumer products such as home theater receivers and satellite set-top boxes. It is able to handle a maximum power output of 40W and has a very low noise level.

The working principle behind a 2SC4713KT146S is relatively simple. A small current applied to the base of the transistor causes a proportionally larger current to flow across the emitter and collector. This amplified current is then fed to the RF circuit, which utilizes it to amplify the RF signal. The voltage applied to the base creates a small electrical field that affects the flow of electrons between the emitter and collector.

The transistor’s gain depends on a number of factors such as input voltage and bias current. However, the 2SC4713KT146S is designed to operate in a wide range of conditions. The transistor has an excellent linearity, allowing for accurate and precise amplification of RF signals. This results in a better signal-to-noise ratio (SNR), allowing for enhanced sound quality.

The 2SC4713KT146S is a popular choice due to its wide range of applications and high performance. It is also inexpensive and easy to obtain. This makes it an ideal choice for engineers who are looking for a reliable and cost-effective RF solution.

The specific data is subject to PDF, and the above content is for reference

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