2SC4725TLP Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	50mA
Voltage - Collector Emitter Breakdown (Max):	20V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 4mA, 20mA
Current - Collector Cutoff (Max):	500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	82 @ 10mA, 10V
Power - Max:	150mW
Frequency - Transition:	1.5GHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-75, SOT-416
Supplier Device Package:	EMT3
Base Part Number:	2SC4725

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Introduction2SC4725TLP is a PNP transistor from the Toshiba range. It is a low saturation PNP transistor and is designed for use in various high-speed, high-voltage, low-noise applications. It is a bipolar junction transistor (BJT) that has both an N-type and P-type region. The 2SC4725TLP device has a high breakdown voltage (VCEO) and minimal current leakage (L). It has a low collector-emitter saturation voltage (VCE(sat)) and relatively low power dissipation. 2SC4725TLP Device StructureThe 2SC4725TLP is a PNP type transistor and consists of a silicon chip inside an insulated case. It features an anode, a cathode and a control lead. The anode is the positive terminal of the device, while the cathode is the negative terminal. The control lead is the base terminal and determines the magnitude of current between the anode and the cathode. The anode and cathode are connected to the base terminal through a number of slits in the base, known as the emitter region. The anode, cathode and control lead are electrically isolated from each other by a layer of silicon. 2SC4725TLP Application Field2SC4725TLP transistors from Toshiba can be used in a wide range of high-voltage, low-noise, high-speed applications. It is commonly used in power supply circuits, audio amplifiers and other audio equipment, automotive electronics and radio receivers. The 2SC4725TLP transistors from Toshiba are also suitable for use in pulse circuits, RF circuits, switching applications, reversing and switching supply circuits and high-current loads. They are also capable of operating in high-temperature environments, as well as in low-noise and low-distortion applications. 2SC4725TLP Working PrincipleThe 2SC4725TLP is a PNP type transistor. When it is forward biased, the voltage across the transistor’s collector-base junction is positive. This causes electrons to flow from the emitter to the base and then to the collector, resulting in a current. The current is determined by the amount of voltage applied to the base. When the voltage is removed, the transistor will become reverse biased, and the current will stop flowing. The microwatts of power consumed by the 2SC4725TLP are determined by the size of the voltage applied to the base. When the voltage across the collector-base junction is increased, the current flowing through the transistor increases as well. The maximum allowable current that the 2SC4725TLP can carry is determined by the device’s maximum collector-emitter voltage rating. ConclusionThe 2SC4725TLP is a PNP transistor from the Toshiba range. It has a high breakdown voltage, low collector-emitter saturation voltage and low power dissipation. It is suitable for use in a wide range of high-speed, high-voltage, low-noise applications. The 2SC4725TLP is forward biased when a voltage is applied to its base terminal, it then allows electrons to flow from the emitter to the base and then to the collector, resulting in a current. The current is determined by the amount of voltage applied to the base. When the voltage is removed, the transistor is reverse biased and the current will stop flowing.

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