2SC4953

2SC4953 Application Field and Working Principle

The 2SC4953 is a bipolar junction transistor (BJT) manufactured by Toshiba. It is categorized under the single transistor type and is suitable for many applications where an NPN type bipolar junction transistor is needed. The 2SC4953 is built using an advanced diffuse layer and polycrystalline silicon process.

Features:

• High voltage application (VCE(max) = 250 V)
• High transition frequency
• High DC current gain (hFE = 80–200)
• Low saturation voltage (VCE(sat) = 0.4–0.7 V)
• High Pd (Allowable power dissipation = 230 mW)
• High parasitic-free reverse current gain (hRE = 10–100)
• High current sharing ratio

Applications:

• Power switching circuits
• High voltage switching circuits
• High speed analog switch
• Telecommunications equipment
• Interface circuits
• Motor control circuits

Working Principle:

The 2SC4953 is a NPN type bipolar junction transistor (BJT). This means that it has three layers of semiconductor material, with the middle layer connected to negative voltage (the emitter) and the other two layers (the base and collector) connected to positive voltage. The purpose of this transistor is to control the current flowing through it. When a voltage is applied to the base of the transistor, it allows current to flow from the emitter to the collector. The amount of current flowing is proportional to the amount of voltage applied to the base; this is known as the transistor’s current gain (hFE).

In this way, the 2SC4953 can be used as a switch, allowing a circuit to be turned on and off by simply changing the voltage applied to the base of the transistor. The transistor also has a high transition frequency, meaning it can switch between on and off states quickly and efficiently. This makes it suitable for applications in high-speed analog switching and power control.

The 2SC4953 also offers high DC current gain (hFE) and low saturation voltage (VCE(sat)), meaning that the transistor is capable of handling high voltage and current loads. It also has a high parasitic-free reverse current gain (hRE), allowing it to protect against EMF-related circuit damage and protect other components, such as relays and motors, from damage due to electrical spikes.