2SC5011-A Allicdata Electronics
Allicdata Part #:

2SC5011-A-ND

Manufacturer Part#:

2SC5011-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: RF TRANSISTOR NPN SOT-343
More Detail: RF Transistor NPN 12V 100mA 6.5GHz 150mW Surface M...
DataSheet: 2SC5011-A datasheet2SC5011-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Strip
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 13dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: --
Description

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2SC5011-A is a silicon NPN epitaxial transistor specifically designed for use in RF power amplifiers. Featuring a low noise level and high gain linearity, 2SC5011-A is a popular choice for radio transmitters and receiver amplifiers. Understanding the working principle and application field of this transistor is necessary for engineers who work with RF circuitry.

Introduction

The 2SC5011-A transistor is a NPN silicon epitaxial transistor. It is one of many variants in the 2SC5011 series. Each variant has different operating characteristics and is suitable for different uses. The 2SC5011-A variant has a powerful combination of linearity and low noise which makes it ideal for use in RF power amplifier circuits. It is also known as an RF power transistor.

Working Principle

The 2SC5011-A has three leads: the base, collector, and emitter leads. When a small electrical current is applied to the base lead, it creates a larger current flow between the collector and emitter leads. This is known as the transistor’s “gain” or amplification factor. The transistor amplifies signals which pass through it and can be used for various purposes, including RF signal amplification.

The transistor also acts like a switch. When there is current present in the base lead, the transistor is “on” and current can flow through the collector and emitter. When the base current is removed, the transistor switches “off” and current can no longer flow.

2SC5011-A Application Field

The 2SC5011-A transistor is ideal for use in RF power amplifiers. It has low noise and high gain linearity and is capable of supporting higher power levels than many other transistors. This makes it ideal for transmitters and receivers in radio communication systems, including those used in the automotive industry.

The 2SC5011-A is also used in amplifier circuits for consumer and professional audio applications, such as high-power amplifiers and public address systems. It is also suitable for use in microwave ovens, as well as for radio frequency identification (RFID) systems.

Conclusion

The 2SC5011-A is a silicon NPN epitaxial transistor designed for use in RF amplifier circuits. It has a low noise level and high gain linearity which makes it suitable for a wide range of applications, including RF signal amplification, audio signal amplification, and RFID systems. Understanding the working principle and application field of this transistor is important for engineers who design and develop RF circuitry.

The specific data is subject to PDF, and the above content is for reference

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