2SC54190RA

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	70mA
Voltage - Collector Emitter Breakdown (Max):	300V
Vce Saturation (Max) @ Ib, Ic:	1.2V @ 5mA, 50mA
Current - Collector Cutoff (Max):	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 5mA, 10V
Power - Max:	1W
Frequency - Transition:	50MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	3-SIP
Supplier Device Package:	MT-2-A1
Base Part Number:	2SC5419

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DescriptionThe 2SC54190RA is a NPN epitaxial silicon transistor designed for use in switching and Class B amplifier applications. It is composed of two P-type and N-type layers of silicon, with the N-type layer forming the “base” and providing the current flow to and from the other layers. It is the combined action of these two layers that allows the 2SC54190RA to be used as either an amplifier or a switch.Application FieldThe 2SC54190RA is mainly used in areas where high-speed switching is needed, such as in switching power supplies, DC-DC converters, and in high-speed switching circuits for audio and video equipment, computers and peripherals, electronic equipment, and industrial control systems. This device can also be used in Class-B audio amplifiers or high-frequency amplifiers, such as those found in television set antennas or other low-power electronic devices.Working PrincipleThe 2SC54190RA is a bipolar junction transistor (BJT). It has three terminals that allow current to flow from the emitter to the collector through the base. The base-emitter junction of the transistor is forward biased, which means that the voltage applied to it is higher than the common emitter/collector voltage, thus allowing current to flow through the base. This base current, when it exceeds a certain value, will turn on the transistor, i.e. it will switch it from its off to its on state. Once the transistor is switched on, the collector current increases, resulting in the emitter voltage becoming more negative than the collector voltage, thereby allowing current to flow from the collector to the emitter. The transistor remains in the on state until the current through the base is reduced to a value below the switching current.ConclusionIn conclusion, the 2SC54190RA is a NPN silicon transistor designed for use in switching and Class B amplifier applications. It is mainly used in areas where high-speed switching is needed, such as for switching power supplies and DC-DC converters, as well as for audio and video equipment, computers and peripherals, electronic equipment, and industrial control systems. The 2SC54190RA is a bipolar junction transistor (BJT). It has three terminals that allow current to flow from its emitter to its collector through the base. It is switched on or off by applying or reducing current to the base, and its on state allows current to flow from its collector to its emitter.

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