Allicdata Part #: | 2SC5096-RLFTR-ND |
Manufacturer Part#: |
2SC5096-R,LF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS RF NPN 10V 1GHz SSM |
More Detail: | RF Transistor NPN 10V 15mA 10GHz 100mW Surface Mou... |
DataSheet: | 2SC5096-R,LF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 10V |
Frequency - Transition: | 10GHz |
Noise Figure (dB Typ @ f): | 1.4dB @ 1GHz |
Gain: | 1.4dB |
Power - Max: | 100mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 7mA, 6V |
Current - Collector (Ic) (Max): | 15mA |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SSM |
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Bipolar Junction Transistors (BJT) are a type of semiconductor components that are used for amplification, switching and signal processing. When used for RF applications, BJTs are known as 2SC5096-R,LF transistors. This type of transistor offers very high frequency performance, making them ideal for RF applications.
The 2SC5096-R,LF is a surface-mount device that enables reliable signal management in radio frequency specific systems. It consists of two pnp transistors consisting of a base, emitter and collector, as well as three leads – a base, emitter, and collector. It has a maximum collector current of 1.25A, and is capable of operating at temperatures ranging from 0°C to 120°C. Additionally, maximum storage temperature ratings range from -50°C to 125°C.
The working principle of 2SC5096-R,LF is based on the typical principle of bipolar junction transistors. When the base (B) is Low, Long Off, a forward current flows between the emitter (E) and the collector (C), this is the bipolar current gain. In this scenario, the emitter current supplied is equal to the collector current, plus the base current. This can be exemplified by the following equation: Collector current (IC) = Emitter current (IE) + Base current (IB). The Base current also depends on the Collector to Base voltage.
The 2SC5096-R,LF is widely used in various RF applications owing to its outstanding RF performance, excellent gain and high temperature range. Its use is mainly found in applications such as cellphones, satellite navigation systems and other communication equipment that operate around 2.4GHz-2.5GHz frequency range. Other common applications of 2SC5096-R,LF includes RF amplifiers, linear power amplifiers and low noise amplifiers. Furthermore, this type of transistor is also used in high-power radio transmitters.
In conclusion, the 2SC5096-R,LF is a type of bipolar junction transistor that is used for RF applications. Working on the principle of typical bipolar junction transistors, this type of transistor offers excellent RF performance, good gain and wide temperature range.It is widely used in various cellular phones, communications equipment and RF amplifiers, linear power amplifiers, low noise amplifiers, and high-power radio transmitters. These features make the 2SC5096-R,LF ideal for various types of RF applications.
The specific data is subject to PDF, and the above content is for reference
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