Allicdata Part #: | 2SC5964-TD-EOSTR-ND |
Manufacturer Part#: |
2SC5964-TD-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 50V 3A SOT89-3 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 3A 380MHz 3.5W Su... |
DataSheet: | 2SC5964-TD-E Datasheet/PDF |
Quantity: | 7000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 290mV @ 100mA, 2A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 100mA, 2V |
Power - Max: | 3.5W |
Frequency - Transition: | 380MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | PCP |
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The 2SC5964-TD-E is a single-stage bipolar junction transistor (BJT). The device is designed for use in various applications ranging from power switches to high frequency amplifiers. It features an enhanced breakdown voltage of up to 30 V and is able to handle up to 8 amps.
A BJT is a semiconductor device consisting of two PN junctions, connected in series. The terminal connecting the two junctions is referred to as the base, while the two ends of the device are called the collector and the emitter. The basic operation of the BJT device is based on the fact that a small current in the base controls a much larger current flowing between the collector and the emitter. This current control is made possible by the reverse bias voltage that is placed across the base-collector junction. As a result, most of the current flow between the collector and emitter will be controlled by the base current. This current control capability makes BJTs extremely useful for producing high power amplifiers and analog switches.
The 2SC5964-TD-E offers an extremely high breakdown voltage of up to 30 V and a power rating of up to 8 amps. It also features a high switching speed, making it one of the most popular transistors for high-frequency amplifiers. The device is constructed with a gold-plated nickel-iron package, which provides excellent thermal performance. The low thermal resistance helps to ensure that the device stays cool and does not overheat under heavy loads. Additionally, the device has a wide range of temperature stability and a low resistance junction, which helps to provide reliable operation.
The 2SC5964-TD-E has been designed for various applications, such as switching power supplies, DC-DC converters, motor control, and high-frequency amplifiers. It is particularly well suited for applications that require high power and high speed operation. In addition, the device is also suitable for use in automotive, industrial and telecommunications applications. The device is also available in a variety of packages including TO-220, TO-251, and TO-254, which makes it easy to mount and include in any circuit board.
In conclusion, the 2SC5964-TD-E is one of the most popular transistors on the market, offering high breakdown voltage and 8 amps of power handling. The device is suitable for a wide range of applications, including power switches, high-frequency amplifiers, and motor control. Its construction with a gold-plated nickel-iron package provides excellent thermal performance and low thermal resistance, ensuring reliable operation at high loads. Furthermore, it is available in a variety of packages, making it easy to mount and include in any circuit board.
The specific data is subject to PDF, and the above content is for reference
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