2SC50260RL Allicdata Electronics

2SC50260RL Discrete Semiconductor Products

Allicdata Part #:

2SC50260RLTR-ND

Manufacturer Part#:

2SC50260RL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN 80V 1A MINI-PWR
More Detail: Bipolar (BJT) Transistor NPN 80V 1A 120MHz 1W Surf...
DataSheet: 2SC50260RL datasheet2SC50260RL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MiniP3-F1
Base Part Number: 2SC5026
Description

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The 2SC50260RL is a general-purpose NPN bipolar transistor designed for high-density pin-arrangement integrations. It is usually used in applications where the collector current can reach up to 1 ampere. The 2SC50260RL is useful for audio amplifications, oscillator circuits, and timer circuits. This transistor also features a high breakdown voltage and a wide range of collector-emitter voltage variation.

A bipolar junction transistor (BJT) is a three-terminal electronic device consisting of two p-type and one n-type semiconductor layers. It is widely used as a switch or amplifier in a variety of electronics applications. The conventional BJT is a bipolar transistor, because the carriers involved are both electrons and holes. The 2SC50260RL is a NPN single BJT. It has three pins: collector (C), base (B), and emitter (E). The NPN name means that the current is flowing between the collector and emitter when the base is sufficiently positive.

The working principle of a 2SC50260RL is based on the current flow through a closed circuit formed by the base and collector. When a current starts flowing through the base and collector, it raises the voltage of the collector to a point where a portion of the current is drawn from the collector terminals. This current is then used to control the current flow between the collector and emitter, thus making it possible to amplify or switch signals. As the base is made more negative, the collector current is reduced and the transistor is deactivated.

The 2SC50260RL can be used in a range of applications such as audio amplifiers, oscillator circuits, and timer circuits. The particular features of the 2SC50260RL, such as a high breakdown voltage and a wide range of collector-emitter voltage variation, make it ideal for these types of applications. It is also noted for its low saturation voltage and low VCE(sat) parameters. Furthermore, the high current rating of 1 ampere and low noise ensure smooth and precise performance in any application.

In conclusion, the 2SC50260RL is a NPN single bipolar transistor designed for applications requiring high current and precise control. It is suitable for audio amplifications, oscillator circuits, and timer circuits. This transistor has various features such as a high breakdown voltage, a wide range of collector-emitter voltage variation, low saturation voltage, low VCE(sat) parameters, and high current rating of 1 ampere. All of these features combined make the 2SC50260RL an ideal choice for precision electronics applications.

The specific data is subject to PDF, and the above content is for reference

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