2SC5916TLR Allicdata Electronics

2SC5916TLR Discrete Semiconductor Products

Allicdata Part #:

2SC5916TLRTR-ND

Manufacturer Part#:

2SC5916TLR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN 30V 2A TSMT3
More Detail: Bipolar (BJT) Transistor NPN 30V 2A 250MHz 500mW S...
DataSheet: 2SC5916TLR datasheet2SC5916TLR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
Power - Max: 500mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Supplier Device Package: TSMT3
Base Part Number: 2SC5916
Description

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2SC5916TLR Application Field and Working Principle

The 2SC5916TLR is a high-performance NPN transistor which finds its applications in an assortment of industrial, automotive, and consumer products. It is a single-Bipolar Junction Transistor (BJT) manufactured by Toshiba Semiconductor. It has an NPN structure and an isolation collector to base style. The maximum junction temperature of this transistor is +175°C and a maximum power dissipation of 350 mW.

The structure of a 2SC5916TLR includes a three-layer structure where one layer acts as the base, one acts as the emitter, and one acts as the collector. The base is ultra-thin and isolates the other two layers from each other to prevent short-circuiting. This isolation layer also provides isolation of the base, emitter, and collector. The isolation layer provides an insulating layer between the emitter and the collector, so that the transistor can handle voltage and current without shorts.

The collector is where the current flows in and out of the device. It is composed of heavily doped semiconductor material with a thick layer of metal contacts. This allows much higher current densities and denser integration of electronic components on the same die. The 2SC5916TLR is known for its high current gain and its fast switching speed, because of its thick metal contacts.

The emitter is a thin metal layer that is insulated from the collector. The main purpose of the emitter is to collect conduction electrons from the base layer and inject them into the collector. The 2SC5916TLR has a collector-to-emitter breakdown voltage of 400 V and a collector-to-base breakdown voltage of 80 V. With a low voltage gain, the transistor can handle significantly larger voltages than other transistors of similar size.

The base is the layer that controls the flow of current between the emitter and collector. This is done with two diodes that regulate the flow of electrons. When the voltage at the base is positive, the diodes allow current to flow from the emitter to the collector. When the voltage at the base is negative, the diodes allow the current to reverse direction, and flow from the collector to the emitter. This is how the transistor operates as an amplifier.

2SC5916TLR transistors are used in a wide range of applications. They are used in consumer electronics devices such as mobile phones, laptops, and digital audio players. They are also used in industrial control systems, automotive systems, and power supplies. The 2SC5916TLR can also be used to create powerful pole-switching circuits, amplifiers, integrated circuits, and digital circuitry.

In conclusion, the 2SC5916TLR is an innovative single-Bipolar Junction Transistor designed to provide high performance and efficiency. It is used in a variety of applications, such as consumer electronics products, industrial control systems, automotive systems, and power supplies. Its wide range of uses and impressive performance make it an attractive choice for many circuit designs.

The specific data is subject to PDF, and the above content is for reference

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