Allicdata Part #: | 2SC5732TLQ-ND |
Manufacturer Part#: |
2SC5732TLQ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN 30V 5A SOT-428 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 5A Surface Moun... |
DataSheet: | 2SC5732TLQ Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Frequency - Transition: | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | CPT3 |
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The 2SC5732TLQ is a silicon NPN transistor designed for use in high-frequency amplifiers. The used 2SC5732TLQ is a bipolar transistor also known as a BJT (bipolar junction transistor). It belongs to a single type of transistor, meaning it is composed of only one active element. This makes it an ideal choice for applications requiring low noise and high-frequency response.
The 2SC5732TLQ is mainly used in microwave amplifiers, radio frequency amplifiers (RF amplifiers), oscillators, mixers, and switches. It has a relatively low collector-emitter saturation voltage and transistors good switching performance. This makes it suitable for signal-mixed applications in digital modulation and 3G communications. The transistor is also suitable for high-gain and high-frequency signal power amplifiers. Other applications include medium power amplifiers, stabilized power supplies, and general-purpose switching.
The 2SC5732TLQ is composed of three layers of semiconductor material connected in series. The first layer, the emitter, is connected to the negative terminal, the second layer, the base, is connected to the positive terminal, and the third layer, the collector, is connected to the ground. This transistor works when a voltage is applied between the emitter and base terminals. This causes a current to flow across the junction, increasing the current in the base and emitter. This current then induces a large current flow in the collector. The current between the emitter and collector is determined by the resistance between them, called the base emitter resistance.
The 2SC5732TLQ is mainly rated with a maximum collector dissipation of 400mW. It has a maximum collector current of 5A and a maximum collector-base voltage of 50V. Its collector-emitter saturation voltage is relatively low - 1.3V at 0.5A. The transistor also has a low noise figure of 1.5dB at 1GHz and a maximum frequency response of up to 2GHz. The 2SC5732TLQ has a wide temperature range from -40°C to 150°C. This allows it to operate even in extreme temperatures.
The 2SC5732TLQ is a commonly used bipolar transistor in high-frequency applications. It provides high gain and good noise reduction characteristics. Its low collector-emitter saturation voltage and wide temperature range make it suitable for a number of applications, including microwave amplifiers, radio frequency amplifiers, oscillators, mixers, switches, stabilized power supplies and general-purpose switching. The 2SC5732TLQ also has a low noise figure and a frequency response of up to 2GHz, making it ideal for high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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