| Allicdata Part #: | 2SC5994-TD-EOSTR-ND |
| Manufacturer Part#: |
2SC5994-TD-E |
| Price: | $ 0.08 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 50V 2A SOT89-3 |
| More Detail: | Bipolar (BJT) Transistor NPN 50V 2A 420MHz 1.3W Su... |
| DataSheet: | 2SC5994-TD-E Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.08000 |
| 10 +: | $ 0.07760 |
| 100 +: | $ 0.07600 |
| 1000 +: | $ 0.07440 |
| 10000 +: | $ 0.07200 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 2A |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 50mA, 1A |
| Current - Collector Cutoff (Max): | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 100mA, 2V |
| Power - Max: | 1.3W |
| Frequency - Transition: | 420MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-243AA |
| Supplier Device Package: | PCP |
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The 2SC5994-TD-E belongs to the transistors - bipolar (BJT) - single category. Also known as Silicon NPN Epitaxial Planar Transistor, it is characterized by small size and high transistor gain. In technical terms, it has an Noise Figure (dB) of 2.5 and a MAXIMUM Collector Power Dissipation (Pc) of 0.75W. It has both a High-Frequency Amplification Factor (hfe) and a Low-Frequency Amplification Factor (hfe) of 50. In addition, its Collector-Base Breakdown Voltage (V(BR)CBO) is equal to -30V and its Collector-Emitter Breakdown Voltage (V(BR)CEO) is equal to -60V.
A 2SC5994-TD-E application field is mainly used in consumer electronics and high-end engineering equipment requiring very low current high frequency operation and low power amplification in the audio and communication technology. It has many advantages such as high gain, low noise, wide frequency range, wide operating temperature range and fast rise time.
In terms of the working principle, a 2SC5994-TD-E is a type of semiconductor device. It is made up of three regions - the base, collector and emitter - separated by P-type and N-type regions. When a voltage is applied to the base region, current flows between the collector and emitter regions, which are both connected to power sources. This current will be amplified due to the transistor effect. As a result, the base current is increased and the collector current is increased at a lower magnitude, creating an amplified signal.
In order to use a 2SC5994-TD-E effectively, it is important to consider various factors such as the power rating of the transistor, the biasing method, and the operating point of the transistor. By setting up the right conditions, one can achieve optimal performance from the device.
The 2SC5994-TD-E is an ideal device for applications that require high gain, wide frequency range and fast rise time. As such, it can be used in consumer electronics, high-end engineering equipment and audio and communication technology. For those who need a reliable and high-performance device with low current high frequency operation and low power amplification, the 2SC5994-TD-E is the perfect choice.
The specific data is subject to PDF, and the above content is for reference
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2SC5994-TD-E Datasheet/PDF