2SC5015-A Allicdata Electronics
Allicdata Part #:

2SC5015-A-ND

Manufacturer Part#:

2SC5015-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: RF TRANSISTOR NPN SOT-343
More Detail: RF Transistor NPN 6V 30mA 12GHz 150mW Surface Moun...
DataSheet: 2SC5015-A datasheet2SC5015-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Strip
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 11dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: --
Description

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Transistors - Bipolar (BJT) - RF are common devices used in a wide range of applications and the 2SC5015-A is no exception. The 2SC5015-A is an NPN junction transistor, commonly used in high frequency and radio frequency applications. This article will explore the application field and working principle of the 2SC5015-A.

What is a NPN Transistor?

An NPN transistor is an active semiconductor device consisting of three layers of a semiconductor material. In an NPN transistor, the two outer layers are N-type an the inner layer is P-type. These layers form a voltage-controlled switch that can be used to amplify or switch high-coefficient currents.

Application Field for 2SC5015-A

The 2SC5015-A is typically used in power supplies and radio circuits. It is also suitable for switch mode power supplies and audio amplifiers. Due to its high frequency capabilities, it can also be used in radio frequency and high-frequency applications such as Amateur radio, television, and mobile radio applications.

Working Principle of 2SC5015-A

In order to understand how the 2SC5015-A works, it is important to first understand how an NPN transistor operates. NPN transistors are current-controlled devices. When a voltage is applied to the base of the transistor the electrons in the base region are attracted to the base-collector junction. This causes a current to flow between the collector and the emitter. This current can be controlled by varying the base voltage.

In the case of the 2SC5015-A, the base current is typically small enough that the transistor can be used for radio frequency applications. When an RF signal is applied to the base, it causes a voltage variation across the transistor. This voltage variation then causes a corresponding current variation in the collector-emitter circuit. The amount of current variation is proportional to the strength of the input signal.

Conclusion

The 2SC5015-A is a high frequency NPN transistor that has a wide range of applications in power supplies, radio circuits, and high-frequency applications. The device operates on the same principle as other NPN transistors, by allowing a current to flow between the collector and the emitter when a voltage is applied to the base.

The 2SC5015-A is a reliable device that can be used for a variety of applications. Its high frequency capabilities make it particularly well-suited for radio frequency and high-frequency applications. While it may not be the right device for every application it is certainly worth considering if your project requires a transistor with RF capabilities.

The specific data is subject to PDF, and the above content is for reference

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